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Jean Lapointe appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Published work
An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth.
Absorption spectroscopy is widely used in sensing and astronomy to understand molecular compositions on microscopic to cosmological scales. However, typical dispersive spectroscopic techniques require multichannel detection, fundamentally limiting the ability to detect extremely weak signals when compared to direct photometric methods. We report the realization of direct spectral molecular detection using a silicon nanophotonic waveguide resonator, obviating dispersive spectral acquisition. We use a thermally tunable silicon ring resonator with a transmission spectrum matched and cross-correlated to the quasi-periodic vibronic absorption lines of hydrogen cyanide. We show that the correlation peak amplitude is proportional to the number of overlapping ring resonances and gas lines, and that molecular specificity is obtained from the phase of the correlation signal in a single detection channel. Our results demonstrate on-chip correlation spectroscopy that is less restricted by the signal-to-noise penalty of other spectroscopic approaches, enabling the detection of faint spectral signatures.
One of the key challenges in developing quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this power broadening regime and demonstrate the longest coherence at exciton saturation where the detection count rates are highest. We detect single-photon count rates of 460,000 counts per second under pulsed laser excitation while maintaining a single-photon purity of greater than 99%. Importantly, the enhanced coherence is attained with quantum dots in ultraclean wurtzite InP nanowires, where the surrounding charge traps are filled by exciting above the wurtzite InP nanowire bandgap. By raising the excitation intensity, the number of possible charge configurations in the quantum dot environment is reduced, resulting in a narrower emission spectrum. Via Monte Carlo simulations we explain the observed narrowing of the emission spectrum with increasing power. Cooling down the sample to 300 mK, we further enhance the single-photon coherence two-fold as compared to operation at 4.5 K, resulting in a homogeneous coherence time, T2, of 1.2 ns.
This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems.