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Researcher profile

Jean Anne C. Incorvia

Jean Anne C. Incorvia contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallNeural and Evolutionary ComputingEmerging Technologiesphysics.app-phcond-mat.mtrl-sciMachine Learningphysics.comp-ph

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Published work

9 published item(s)

preprint2023arXiv

Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data

With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for ACAM due to their low read/write energy and high endurance, but MTJs are usually restricted to digital values. The spin orbit torque-driven domain wall-magnetic tunnel junction (DW-MTJ) has been recently shown to have multi-bit function. Here, an ACAM circuit is studied that uses two domain wall-magnetic tunnel junctions (DW-MTJs) as the analog storage elements. Prototype DW-MTJ data is input into the magnetic ACAM (MACAM) circuit simulation, showing ternary CAM function. Device-circuit co-design is carried out, showing that 8-10 weight bits are achievable, and that designing asymmetrical spacing of the available DW positions in the device leads to evenly spaced ACAM search bounds. Analyzing available spin orbit torque materials shows platinum provides the largest MACAM search bound while still allowing spin orbit torque domain wall motion, and that the circuit is optimized with minimized MTJ resistance, minimized spin orbit torque material resistance, and maximized tunnel magnetoresistance. These results show the feasibility of using DW-MTJs for MACAM and provide design parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Logical and Physical Reversibility of Conservative Skyrmion Logic

Magnetic skyrmions are nanoscale whirls of magnetism that can be propagated with electrical currents. The repulsion between skyrmions inspires their use for reversible computing based on the elastic billiard ball collisions proposed for conservative logic in 1982. Here we evaluate the logical and physical reversibility of this skyrmion logic paradigm, as well as the limitations that must be addressed before dissipation-free computation can be realized.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic Computing

In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse behaviors from the same materials. Here, we measure artificial synapses based on magnetic materials that use a magnetic tunnel junction and a magnetic domain wall. By fabricating lithographic notches in a domain wall track underneath a single magnetic tunnel junction, we achieve 4-5 stable resistance states that can be repeatably controlled electrically using spin orbit torque. We analyze the effect of geometry on the synapse behavior, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a straight device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application-specific synaptic functions. Implementing an artificial neural network applied on streamed Fashion-MNIST data, we show that the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional neural network for CIFAR-100 image recognition, we show that the straight magnetic synapse achieves near-ideal inference accuracy, due to the stability of its resistance levels. This work shows multi-weight magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

CMOS-Free Multilayer Perceptron Enabled by Four-Terminal MTJ Device

Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neuromorphic systems should exploit the biomimetic behavior of emerging nanodevices. In particular, exceptional opportunities are provided by the non-volatility and analog capabilities of spintronic devices. While spintronic devices have previously been proposed that emulate neurons and synapses, complementary metal-oxide-semiconductor (CMOS) devices are required to implement multilayer spintronic perceptron crossbars. This work therefore proposes a new spintronic neuron that enables purely spintronic multilayer perceptrons, eliminating the need for CMOS circuitry and simplifying fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Domain Wall Leaky Integrate-and-Fire Neurons with Shape-Based Configurable Activation Functions

Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and analog features, which are well-suited to neuromorphic computing. Consequently, these novel devices are at the forefront of beyond-CMOS artificial intelligence applications. However, a large quantity of these artificial neuromorphic devices still require the use of CMOS, which decreases the efficiency of the system. To resolve this, we have previously proposed a number of artificial neurons and synapses that do not require CMOS for operation. Although these devices are a significant improvement over previous renditions, their ability to enable neural network learning and recognition is limited by their intrinsic activation functions. This work proposes modifications to these spintronic neurons that enable configuration of the activation functions through control of the shape of a magnetic domain wall track. Linear and sigmoidal activation functions are demonstrated in this work, which can be extended through a similar approach to enable a wide variety of activation functions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Plasticity-Enhanced Domain-Wall MTJ Neural Networks for Energy-Efficient Online Learning

Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system consists of unsupervised (clustering) as well as supervised sub-systems, and generalizes quickly (with few samples). We demonstrate interactions between physical properties of this device and optimal implementation of neuroscience-inspired plasticity learning rules, and highlight performance on a suite of tasks. Our energy analysis confirms the value of the approach, as the learning budget stays below 20 $μJ$ even for large tasks used typically in machine learning.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles

The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the tunnel barrier between magnetic electrodes, providing a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide-iron systems increases the resistance-area product and causes challenges of device-to-device variability and tunnel barrier degradation under high current. Here, we study using first principles narrower-bandgap scandium nitride tunneling properties and transport in magnetic tunnel junctions in comparison to magnesium oxide. These simulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs via Δ_1 and Δ_2' symmetry filtering with low wavefunction decay rates, allowing a low resistance-area product. The results show that scandium nitride could be a new tunnel barrier material for magnetic tunnel junction devices to overcome variability and current-injection challenges.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture

We propose a hardware learning rule for unsupervised clustering within a novel spintronic computing architecture. The proposed approach leverages the three-terminal structure of domain-wall magnetic tunnel junction devices to establish a feedback loop that serves to train such devices when they are used as synapses in a neuromorphic computing architecture.

0 citations0 reviewsNo code linkedOpen access