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Jawad Ul Hassan

Jawad Ul Hassan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-ph cond-mat.mes-hall physics.app-ph cond-mat.mtrl-sci physics.optics

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preprint2020arXiv

Bright single photon sources in lateral silicon carbide light emitting diodes

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

preprint2020arXiv

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

preprint2019arXiv

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.

preprint2018arXiv

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.

preprint2014arXiv

Isolated electron spins in silicon carbide with millisecond-coherence times

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.