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Matthias Niethammer

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quant-ph cond-mat.mes-hall physics.app-ph math.NA Numerical Analysis physics.comp-ph physics.flu-dyn physics.optics

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preprint2022arXiv

On the molecular mechanism behind the bubble rise velocity jump discontinuity in viscoelastic liquids

Bubbles rising in viscoelastic liquids may exhibit a jump discontinuity of the rise velocity as a critical bubble volume is exceeded. The phenomenon has been extensively investigated in the literature, both by means of experiments as well as via numerical simulations. The occurrence of the velocity jump has been associated with a change of the bubble shape under the formation of a pointed tip at the rear end and to the appearance of a so-called negative wake with the liquid velocity behind the bubble, pointing in the opposite direction to that in viscous Newtonian fluids. We revisit this topic, starting with a review of the state of knowledge on the interrelations between the mentioned characteristic features. In search for a convincing explanation of the jump phenomenon, we performed detailed numerical simulations of the transient rise of single bubbles in 3D, allowing for a local polymer molecular conformation tensor analysis. The latter shows that polymer molecules traveling along the upper bubble hemisphere are stretched in the circumferential direction, due to the flow kinematics. Then, depending on the relaxation time scale of the polymer, the stored elastic energy is either unloaded essentially above or below the bubble's equator. In the former case, this slows down the bubble, while the bubble gets accelerated otherwise. In this latter case, the relative velocity of the polymer molecules against the bubble is increased, giving rise to a self-amplification of the effect and thus causing the bubble rise velocity to jump to a higher level. Detailed experimental velocity measurements in the liquid field around the bubble confirmed the conclusion that the ratio of the time scale of the Lagrangian transport of polymer molecules along the bubble contour to the relaxation time scale of the polymer molecules determines the sub- or supercritical state of the bubble motion.

preprint2021arXiv

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

preprint2020arXiv

Bright single photon sources in lateral silicon carbide light emitting diodes

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

preprint2020arXiv

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

preprint2019arXiv

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.

preprint2018arXiv

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.

preprint2016arXiv

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions.

preprint2015arXiv

Vector magnetometry based on S=3/2 electronic spins

Electronic spin systems with S>1/2 provide an efficient method for DC vector magnetometry, since the conventional electron spin resonance spectra at a given magnetic field reflect not only the field strength but also orientation in the presence of strong spin-spin interactions. S=1 spins, e.g. the nitrogen-vacancy centers in diamond, have been intensively investigated for such a purpose. In this report, we compare S=1 and S=3/2 spins, and discuss how one can apply general principles for the use of high spin systems as a vector magnetometer to the S=3/2 spin systems. We find analytical solutions which allow a reconstruction of the magnetic field strength and polar angle using the observed resonance transitions if an uniaxial symmetry exists for the spin-spin interaction as in S=1 systems. We also find that an ambiguity of determining the field parameters may arise due to the unique properties of S=3/2 systems, and present solutions for it utilizing additional transitions in the low-field region. The electronic spins of the silicon vacancy in silicon carbide will be introduced as a model for the S=3/2 DC vector magnetometer and the practical usage of it, including the magic-angle spinning type method, will be presented too.