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Jason Y. Du

Jason Y. Du appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2017arXiv

Radio Frequency Modulated Signaling Interconnect for Memory-to-Processor and Processor-to-Processor Interfaces: An Overview

With the evolution of heterogeneous computing system, such as network-on-chip, high-performance distributed computing, accelerator-rich architectures and cluster computing, high-speed, energy-efficient and low-latency interfaces among memory-to-processor and processor-to-processor become the key technology to enable those technologies. Simultaneously, the scaling of CMOS makes the switching speed of the transistor up to sub-THz. Radio-frequency or even millimeter-wave modulated signaling interconnect has unique features in ultra-low power operation, dynamic allocation of bandwidth and low latency, compared with convention baseband signaling interconnect. In this work, we overview the different generations of radio-frequency interconnect (RF-I) technology, compare them with conventional baseband signaling interconnect technologies. The limitations and potentials are also discussed in the end.

preprint2016arXiv

Complete DFM Model for High-Performance Computing SoCs with Guard Ring and Dummy Fill Effect

For nanotechnology, the semiconductor device is scaled down dramatically with additional strain engineering for device enhancement, the overall device characteristic is no longer dominated by the device size but also circuit layout. The higher order layout effects, such as well proximity effect (WPE), oxide spacing effect (OSE) and poly spacing effect (PSE), play an important role for the device performance, it is critical to understand Design for Manufacturability (DFM) impacts with various layout topology toward the overall circuit performance. Currently, the layout effects (WPE, OSE and PSE) are validated through digital standard cell and analog differential pair test structure. However, two analog layout structures: the guard ring and dummy fill impact are not well studied yet, then, this paper describes the current mirror test circuit to examine the guard ring and dummy fills DFM impacts using TSMC 28nm HPM process.