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Chun-Chen Liu

Chun-Chen Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2020arXiv

Multi-Cycle-Consistent Adversarial Networks for CT Image Denoising

CT image denoising can be treated as an image-to-image translation task where the goal is to learn the transform between a source domain $X$ (noisy images) and a target domain $Y$ (clean images). Recently, cycle-consistent adversarial denoising network (CCADN) has achieved state-of-the-art results by enforcing cycle-consistent loss without the need of paired training data. Our detailed analysis of CCADN raises a number of interesting questions. For example, if the noise is large leading to significant difference between domain $X$ and domain $Y$, can we bridge $X$ and $Y$ with an intermediate domain $Z$ such that both the denoising process between $X$ and $Z$ and that between $Z$ and $Y$ are easier to learn? As such intermediate domains lead to multiple cycles, how do we best enforce cycle-consistency? Driven by these questions, we propose a multi-cycle-consistent adversarial network (MCCAN) that builds intermediate domains and enforces both local and global cycle-consistency. The global cycle-consistency couples all generators together to model the whole denoising process, while the local cycle-consistency imposes effective supervision on the process between adjacent domains. Experiments show that both local and global cycle-consistency are important for the success of MCCAN, which outperforms the state-of-the-art.

preprint2016arXiv

Complete DFM Model for High-Performance Computing SoCs with Guard Ring and Dummy Fill Effect

For nanotechnology, the semiconductor device is scaled down dramatically with additional strain engineering for device enhancement, the overall device characteristic is no longer dominated by the device size but also circuit layout. The higher order layout effects, such as well proximity effect (WPE), oxide spacing effect (OSE) and poly spacing effect (PSE), play an important role for the device performance, it is critical to understand Design for Manufacturability (DFM) impacts with various layout topology toward the overall circuit performance. Currently, the layout effects (WPE, OSE and PSE) are validated through digital standard cell and analog differential pair test structure. However, two analog layout structures: the guard ring and dummy fill impact are not well studied yet, then, this paper describes the current mirror test circuit to examine the guard ring and dummy fills DFM impacts using TSMC 28nm HPM process.