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Researcher profile

Klaus Zollner

Klaus Zollner contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2026arXiv

Resonant magnetic proximity hot spots in Co/hBN/graphene

Magnetic proximity effects in Co/hBN/graphene heterostructures are systematically analyzed via first-principles calculations, demonstrating a pronounced localized spatial variation of the induced spin polarization of graphene's Dirac states. The proximity-induced exchange coupling, magnetic moments, and tunneling spin polarization (TSP) are shown to depend sensitively on the atomic registry at the interfaces. We analyze more than twenty distinct stackings, including high- and low-symmetry configurations, and reveal that the spin splittings of graphene's Dirac bands span a wide range from 1 to 100 meV, depending on the local hybridization of Co $d_{z^2}$, hBN $p_z$, and graphene $p_z$ orbitals. The strongest proximity effects emerge at geometric resonances, or "proximity hot spots", where the three orbital states overlap maximally. The local spin polarization also depends sensitively on energy: Dirac states aligned with resonant Co orbitals experience the most pronounced exchange interaction. At these energies, the pseudospin Hamiltonian description of magnetic proximity effects breaks down. Outside these resonances, the pseudospin picture is restored. Our findings highlight the intrinsically local nature of proximity effects, governed by the spectral resonance and interlayer wavefunction overlap. We further quantify how additional hBN layers, interlayer twist, and multilayer graphene modify the proximity exchange and TSP, offering microscopic insight for designing spintronic van der Waals heterostructures with engineered interfaces and optimized spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Strong manipulation of the valley splitting upon twisting and gating in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures

We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is employed to quantify the proximity-induced exchange. Upon twisting from 0° to 30°, we find a transition of the TMDC valence band (VB) edge exchange splitting from about $-2$ to $2$ meV, while the conduction band (CB) edge exchange splitting remains nearly unchanged at around $-3$ meV. For the VB of WSe$_2$ (MoSe$_2$) on CrI$_3$, the exchange coupling changes sign at around 8° (16°). We find that even at the angles with almost zero spin splittings of the VB, the real-space spin polarization profile of holes at the band edge is highly non-uniform, with alternating spin up and spin down orbitals. Furthermore, a giant tunability of the proximity-induced exchange coupling is provided by a transverse electric field of a few V/nm. We complement our \textit{ab initio} results by calculating the excitonic valley splitting to provide experimentally verifiable optical signatures of the proximity exchange. Specifically, we predict that the valley splitting increases almost linearly as a function of the twist angle. Furthermore, the proximity exchange is highly tunable by gating, allowing to tailor the valley splitting in the range of 0 to 12 meV in WSe$_2$/CrI$_3$, which is equivalent to external magnetic fields of up to about 60 Tesla. Our results highlight the important impact of the twist angle and gating when employing magnetic vdW heterostructures in experimental geometries.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides

We present a DFT-based investigation of the twist-angle dependent proximity spin-orbit coupling (SOC) in graphene/TMDC structures. We find that for Mo-based TMDCs the proximity valley-Zeeman SOC exhibits a maximum at around 15--20°, and vanishes at 30°, while for W-based TMDCs we find an almost linear decrease of proximity valley-Zeeman SOC when twisting from 0° to 30°. The induced Rashba SOC is rather insensitive to twisting, while acquiring a nonzero Rashba phase angle, $φ\in [-20;40]$°, for twist angles different from 0° and 30°. This finding contradicts earlier tight-binding predictions that the Rashba angle can be 90° in the studied systems. In addition, we study the influence of several tunability knobs on the proximity SOC for selected twist angles. By applying a transverse electric field in the limits of $\pm 2$ V/nm, mainly the Rashba SOC can be tuned by about 50\%. The interlayer distance provides a giant tunability, since the proximity SOC can be increased by a factor of 2--3, when reducing the distance by about 10\%. Encapsulating graphene between two TMDCs, both twist angles are important to control the interference of the individual proximity SOCs, allowing to precisely tailor the valley-Zeeman SOC in graphene, while the Rashba SOC becomes suppressed. Finally, based on our effective Hamiltonians with fitted parameters, we calculate experimentally measurable quantities such as spin lifetime anisotropy and charge-to-spin conversion efficiencies. The spin lifetime anisotropy can become giant, up to $10^4$, in encapsulated structures. The charge-to-spin conversion, which is due to spin-Hall and Rashba-Edelstein effects, can lead to twist-tunable non-equilibrium spin-density polarizations that are perpendicular and parallel to the applied charge current.

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preprint2022arXiv

Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr$_2$Ge$_2$Te$_6$

We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr$_2$Ge$_2$Te$_6$ from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters ($λ_{\textrm{ex}}^\textrm{A}$ and $λ_{\textrm{ex}}^\textrm{B}$) for a series of twist angles between 0$^{\circ}$ and 30$^{\circ}$. For aligned layers (0$^{\circ}$ twist angle), the exchange coupling of graphene is the same on both sublattices, $λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B} \approx 4$ meV, while the coupling is reversed at 30$^{\circ}$ (with $λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B} \approx -4$ meV). Remarkably, at 19.1$^{\circ}$ the induced exchange coupling becomes antiferromagnetic: $λ_{\textrm{ex}}^\textrm{A} < 0, λ_{\textrm{ex}}^\textrm{B} > 0$. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr$_2$Ge$_2$Te$_6$ bilayers a versatile platform for realizing topological phases and for spintronics applications.

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preprint2022arXiv

Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX$_3$

We investigate the electronic band structure of graphene on a series of two-dimensional magnetic transition-metal phosphorus trichalcogenide monolayers, MPX$_3$ with M={Mn,Fe,Ni,Co} and X={S,Se}, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and sublattice resolved proximity-induced exchange couplings ($λ_{\textrm{ex}}^\textrm{A}$ and $λ_{\textrm{ex}}^\textrm{B}$) from the low-energy Dirac bands of the proximitized graphene. Depending on the magnetic phase of the MPX$_3$ layer (ferromagnetic and three antiferromagnetic ones), completely different Dirac dispersions can be realized with exchange splittings ranging from 0 to 10~meV. Surprisingly, not only the magnitude of the exchange couplings depends on the magnetic phase, but also the global sign and the type. Important, one can realize uniform ($λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B}$) and staggered ($λ_{\textrm{ex}}^\textrm{A} \approx -λ_{\textrm{ex}}^\textrm{B}$) exchange couplings in graphene. From selected cases, we find that the interlayer distance, as well as a transverse electric field are efficient tuning knobs for the exchange splittings of the Dirac bands. More specifically, decreasing the interlayer distance by only about 10\%, a giant 5-fold enhancement of proximity exchange is found, while applying few V/nm of electric field, provides tunability of proximity exchange by tens of percent. We have also studied the dependence on the Hubbard $U$ parameter and find it to be weak. Moreover, we find that the effect of SOC on the proximitized Dirac dispersion is negligible compared to the exchange coupling.

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preprint2022arXiv

Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures

We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$. Employing first-principles calculations we obtain the electronic structures of the multilayer stacks and extract the relevant proximity-induced orbital and spin interaction parameters by fitting the low-energy bands to model Hamiltonians. We also demonstrate the tunability of the proximity effects by a transverse electric field. Using the model Hamiltonians we also study mixed spin-orbit/exchange coupling encapsulation, which allows to tailor the spin interactions very efficiently by the applied field. We also summarize the spin-orbit physics of bare ABA, ABC, and ABB trilayers, and provide, along with the first-principles results of the electronic band structures, density of states, spin splittings, and electric-field tunabilities of the bands, qualitative understanding of the observed behavior and realistic model parameters as a resource for model simulations of transport and correlation physics in trilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of proximitized graphene. While commensurate hBN induces a staggered potential of about 10 meV into the Dirac bands, less lattice-matched hAlN and hGaN disrupt the Dirac point much less, giving a staggered gap below 100 $μ$eV. Proximitized intrinsic SOC surprisingly does not increase much above the pristine graphene value of 12 $μ$eV; it stays in the window of (1-16) $μ$eV, depending strongly on stacking. However, Rashba SOC increases sharply when increasing the atomic number of the boron group, with calculated maximal values of 8, 15, and 65 $μ$eV for B, Al, and Ga-based nitrides, respectively. The individual Rashba couplings also depend strongly on stacking, vanishing in symmetrically-sandwiched structures, and can be tuned by a transverse electric field. The extracted spin-orbit parameters were used as input for spin transport simulations based on Chebyshev expansion of the time-evolution of the spin expectation values, yielding interesting predictions for the electron spin relaxation. Spin lifetime magnitudes and anisotropies depend strongly on the specific (hXN)/graphene/hXN system, and they can be efficiently tuned by an applied external electric field as well as the carrier density in the graphene layer. A particularly interesting case for experiments is graphene/hGaN, in which the giant Rashba coupling is predicted to induce spin lifetimes of 1-10 ns, short enough to dominate over other mechanisms, and lead to the same spin relaxation anisotropy as observed in conventional semiconductor heterostructures: 50\%, meaning that out-of-plane spins relax twice as fast as in-plane spins.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures

We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K&#39; valleys, to extract orbital, spin-orbit, and exchange parameters. The TMDC/hBN/FM heterostructure calculations show that due to the hBN buffer layer, the band structure of the TMDC is preserved, with an additional proximity-induced exchange splitting in the bands. We extract proximity exchange parameters in the 1--10 meV range, depending on the FM. The combination of proximity-induced exchange and intrinsic spin-orbit coupling (SOC) of the TMDCs, leads to a valley polarization, translating into magnetic exchange fields of tens of Tesla. The extracted parameters are useful for subsequent exciton calculations of TMDCs in the presence of a hBN/FM spin injector. Our calculated absorption spectra show large splittings for the exciton peaks; in the case of MoS$_2$/hBN/Co we find a value of about 8 meV, corresponding to about 50 Tesla external magnetic field in bare TMDCs. The reason lies in the band structure, where a hybridization with Co $d$ orbitals causes a giant valence band exchange splitting of more than 10 meV. Structures with Ni do not show any $d$ level hybridization features, but still sizeable proximity exchange and exciton peak splittings of around 2 meV are present in the TMDCs.

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preprint2020arXiv

Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling

We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number $C=1$. We explicitly show edge states in zigzag and armchair nanoribbons and explore their localization behavior. Remarkably, the combination of staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected (unlike in time-reversal systems) pseudohelical states, whose spin is opposite in opposite zigzag edges. Rotating the magnetization from out of plane to in plane makes the system trivial, allowing to control topological phase transitions. We also propose, using density functional theory, a material platform---graphene on Ising antiferromagnet MnPSe$_3$---to realize staggered exchange (pseudospin Zeeman) coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$

The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in direct contact with TaSe$_2$. By combining calculated complex angular dependence of SOT with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI$_3$ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI$_3$ carries current due to evanescent wavefunctions injected by metallic transition metal dichalcogenide TaSe$_2$, while concurrently acquiring strong spin-orbit coupling (SOC) via such proximity effect, whereas the second monolayer of CrI$_3$ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find tunneling magnetoresistance of $\simeq 240$%.

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