BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jan Trieschmann

Jan Trieschmann appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.plasm-phcond-mat.mtrl-sciphysics.comp-phEmerging Technologiesphysics.flu-dyn

Catalog footprint

What is connected

8works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2022arXiv

Charge-optimized many-body interaction potential for AlN revisited to explore plasma-surface interactions

Plasma-surface interactions during AlN thin film sputter deposition could be studied by means of reactive molecular dynamics (RMD) methods. This requires an interaction potential that describes all species as well as wall interactions (e.g., particle emission, damage formation) appropriately. However, previous works focused on the establishment of AlN bulk potentials. Although for the third-generation charge-optimized many-body (COMB3) potential at least a single reference surface was taken into account, surface interactions are subject to limited reliability only. The demand for a revised COMB3 AlN potential is met in two steps: First, the Ziegler-Biersack-Littmark potential is tapered and the variable charge model QTE$^+$ is implemented to account for high-energy collisions and distant charge transport, respectively. Second, the underlying parameterization is reworked by applying a self-adaptive evolution strategy implemented in the GARFfield software. Four wurtzite, three zinc blende and three rock salt surfaces are considered. An example study on the ion bombardment induced particle emission and point defect formation reveals that the revised COMB3 AlN potential is appropriate for the accurate investigation of plasma-surface interactions by means of RMD simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films

Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination of forward sputtered (peened) built-in particles and entrapped working gas atoms. While the former are assumed to hold a predominant role, the effect of the latter on the interaction dynamics as well as thin film properties are scarcely clarified (concurrent or causative). The inherent overlay of the ion bombardment induced processes render an isolation of their contribution impracticable. In this work, this issue is addressed by comparing the results of two case studies on the sputter deposition of Al thin films in Ar working gas. In the first run Ar atoms are fully retained. In the second run they are artificially neglected, as implanted Ar atoms are assumed to outgas anyhow and not alter the ongoing dynamics significantly. Both case studies have in common that the consecutive impingement of 100 particles (i.e., Ar$^+$ ions, Al atoms) onto Al(001) surfaces for ion energies in the range of 3 eV to 300 eV as well as Al/Ar$^+$ flux ratios from 0 to 1 are considered. The surface interactions are simulated by means of hybrid reactive molecular dynamics/force-biased Monte Carlo simulations and characterized in terms of mass density, Ar concentration, biaxial stress, shear stress, ring statistical connectivity profile, Ar gas porosity, Al vacancy density, and root-mean-squared roughness. Ultimately, implanted Ar atoms are found to form subnanometer sized eventually outgassing clusters for ion energies exceeding 100 eV. They fundamentally govern a variety of surface processes (e.g., forward sputtering/peening) and surface properties (e.g., compressive stresses) in the considered operating regime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stochastic behaviour of an interface-based memristive device

A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behaviour observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behaviour, is modelled using the kinetic Cloud-In-a-Cell scheme. The calculated current-voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Analytic model of the energy distribution function for highly energetic electrons in magnetron plasmas

This paper analyzes a situation which is common for magnetized technical plasmas such as dc magnetron discharges and HiPIMS systems, where secondary electrons enter the plasma after being accelerated in the cathode fall and encounter a nearly uniform bulk. An analytic calculation of the distribution function of hot electrons is presented; these are described as an initially monoenergetic beam that slows down by Coulomb collisions with a Maxwellian distribution of bulk (cold) electrons, and by inelastic collisions with neutrals. Although this analytical solution is based on a steady-state assumption, a comparison of the characteristic time-scales suggests that it may be applicable to a variety of practical time-dependent discharges, and it may be used to introduce kinetic effects into models based on the hypothesis of Maxwellian electrons. The results are verified for parameters appropriate to HiPIMS discharges, by means of time-dependent and fully-kinetic numerical calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport of Sputtered Particles in Capacitive Sputter Sources

The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p=0.5 Pa. It is found that -- due to the peculiar geometric conditions -- the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Continuum and Kinetic Simulations of the Neutral Gas Flow in an Industrial Physical Vapor Deposition Reactor

Magnetron sputtering used for physical vapor deposition processes often requires gas pressures well below 1 Pa. Under these conditions the gas flow in the reactor is usually determined by a Knudsen number of about one, i.e., a transition regime between the hydrodynamic and the rarefied gas regime. In the first, the gas flow is well described by the Navier-Stokes equations, while in the second a kinetic approach via the Boltzmann equation is necessary. In this paper the neutral gas flow of argon and molecular nitrogen gas inside an industrial scale plasma reactor was simulated using both a fluid model and a fully kinetic Direct Simulation Monte Carlo model. By comparing both model results the validity of the fluid model was checked. Although in both models a Maxwell-Boltzmann energy distribution of the neutral particles is the natural outcome, the results of the gas flow differ significantly. The fluid model description breaks down, due to the inappropriate assumption of a fluid continuum. This is due to exclusion of non-local effects in the multi dimensional velocity space, as well as invalid gas/wall interactions. Only the kinetic model is able to provide an accurate physical description of the gas flow in the transition regime. Our analysis is completed with a brief investigation of different definitions of the local Knudsen number. We conclude that the most decisive parameter - the spatial length scale L - has to be very careful chosen in order to obtain a reasonable estimate of the gas flow regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ion energy distribution functions behind the sheaths of magnetized and non magnetized radio frequency discharges

The effect of a magnetic field on the characteristics of capacitively coupled radio frequency discharges is investigated and found to be substantial. A one-dimensional particle-in-cell simulation shows that geometrically symmetric discharges can be asymmetrized by applying a spatially inhomogeneous magnetic field. This effect is similar to the recently discovered electrical asymmetry effect. Both effects act independently, they can work in the same direction or compensate each other. Also the ion energy distribution functions at the electrodes are strongly affected by the magnetic field, although only indirectly. The field influences not the dynamics of the sheath itself but rather its operating conditions, i.e., the ion flux through it and voltage drop across it. To support this interpretation, the particle-in-cell results are compared with the outcome of the recently proposed ensemble-in-spacetime algorithm. Although that scheme resolves only the sheath and neglects magnetization, it is able to reproduce the ion energy distribution functions with very good accuracy, regardless of whether the discharge is magnetized or not.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Numerical study of secondary electron emission in a coaxial radio-frequency driven plasma jet at atmospheric pressure

In this work we investigate a numerical model of a coaxial RF-driven plasma jet operated at atmospheric pressure. Due to the cylindrical symmetry an adequate 2-D representation of the otherwise 3-dimensional structure is used. A helium-oxygen chemistry reaction scheme is applied. We study the effect of secondary electrons emitted at the inner electrode as well as the inserted dielectric tube and discuss their impact on the discharge behavior. We conclude that a proper choice of materials can improve the desired mode of operation of such plasma jets in terms of materials and surface processing.

0 citations0 reviewsNo code linkedOpen access