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Researcher profile

James Kally

James Kally contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.

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preprint2014arXiv

Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates

We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.

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