Researcher profile

Jacob S. Levy

Jacob S. Levy contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2014arXiv

Strong polarization mode coupling in microresonators

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode-crossings can be used as a novel tool for dispersion engineering in microresonators.

preprint2013arXiv

Microresonator-Based Comb Generation without an External Laser Source

Recent developments demonstrate that parametric four-wave mixing (FWM) in high-Q microresonators is a highly promising and effective approach for optical frequency comb generation, with applications including spectroscopy, optical clocks, arbitrary waveform generation, frequency metrology, and astronomical spectrograph calibration. Each of these microresonator platforms utilizes a scheme in which the system is pumped by a single-frequency laser at a cavity resonance. This scheme requires tuning of the pump wavelength into resonance and the generated comb is susceptible to fluctuations in pump power or frequency which can disrupt the soft thermal lock and comb generation. We demonstrate a novel fiber-microresonator dual-cavity architecture that preferentially oscillates at modes of the microresonator due to its high density of states and generates robust and broadband combs (> 900 nm) without an external pump laser. Such a scheme could greatly simplify the comb generation process and allow for a fully-integrated chip-scale source with an on-chip amplifier.

preprint2012arXiv

Modelocking and Femtosecond Pulse Generation in Chip-Based Frequency Combs

Development of ultrashort pulse sources has had an immense impact on condensed-matter physics, biomedical imaging, high-field physics, frequency metrology, telecommunications, nonlinear optics, and molecular spectroscopy. Although numerous advancements of such sources have been made, it remains a challenge to create a highly compact, robust platform capable of producing femtosecond pulses over a wide range of wavelengths, durations, and repetition rates. Recent observations of frequency comb generation via cascaded parametric oscillation in microresonators11 suggest a path for achieving this goal. Here we investigate the temporal and spectral properties of parametric combs generated in silicon-nitride microresonators and observe a transition to passive modelocking of the comb consistent with soliton-pulse formation, resulting in the generation of 160-fs pulses at a 99-GHz repetition rate. This platform offers the prospect of producing pulses from 10 fs to a few ps at repetition rates from 10 GHz to > 1 THz and over a wavelength range of 0.8 - 6 μm.

preprint2011arXiv

A Silicon-Based Monolithic Optical Frequency Comb Source

Recently developed techniques for generating precisely equidistant optical frequencies over broad wavelength ranges are revolutionizing precision physical measurement [1-3]. These frequency "combs" are produced primarily using relatively large, ultrafast laser systems. However, recent research has shown that broad-bandwidth combs can be produced using highly-nonlinear interactions in microresonator optical parametric oscillators [4-11]. Such devices not only offer the potential for developing extremely compact optical atomic clocks but are also promising for astronomical spectroscopy [12-14], ultrashort pulse shaping [15], and ultrahigh-speed communications systems. Here we demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator [16,17], which is a fully-monolithic and sealed chip-scale device making it insensitive to the surrounding environment. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth that is nearly an order of magnitude larger than previous measurements. In addition, we investigate the ultrafast temporal properties of the comb and demonstrate its potential to serve as a chip-scale source of ultrafast (sub-ps) pulses.

preprint2011arXiv

High-Performance Silicon-Based Multiple Wavelength Source

We demonstrate a stable CMOS-compatible on-chip multiple-wavelength source by filtering and modulating individual lines from a frequency comb generated by a microring resonator optical parametric oscillator.. We show comb operation in a low-noise state that is stable and usable for many hours. Bit-error rate measurements demonstrate negligible power penalty from six independent frequencies when compared to a tunable diode laser baseline. Open eye diagrams confirm the fidelity of the 10 Gb/s data transmitted at the comb frequencies and the suitability of this device for use as a fully integrated silicon-based WDM source.

preprint2011arXiv

Octave-spanning frequency comb generation in a silicon nitride chip

We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF-noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30-dB reduction in noise as the pump frequency is tuned into the cavity resonance.

preprint2010arXiv

Second-Harmonic Generation in Silicon Nitride Ring Resonators

The emerging field of silicon photonics seeks to unify the high bandwidth of optical communications with CMOS microelectronic circuits. Many components have been demonstrated for on-chip optical communications, including those that utilize the nonlinear optical properties of silicon[1, 2], silicon dioxide[3, 4] and silicon nitride[5, 6]. Processes such as second harmonic generation, which are enabled by the second-order susceptibility, have not been developed since the bulk $χ^{(2)}$ vanishes in these centrosymmetric CMOS materials. Generating the lowest-order nonlinearity would open the window to a new array of CMOS-compatible optical devices capable of nonlinear functionalities not achievable with the?$χ^{(3)}$ response such as electro-optic modulation, sum frequency up-conversion, and difference frequency generation. Here we demonstrate second harmonic (SH) generation in CMOS compatible integrated silicon nitride (Si3N4) waveguides. The $χ^{(2)}$ response is induced in the centrosymmetric material by using the nanoscale structure to break the bulk symmetry. We use a high quality factor Q ring resonator cavity to enhance the efficiency of the nonlinear optical process and detect SH output with milliwatt input powers.