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Researcher profile

J. Wiebe

J. Wiebe contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.str-el

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Published work

13 published item(s)

preprint2016arXiv

Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators

We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations we are able to relate the element specific moment formation to a local Stoner criterion. While Fe adatoms form large spin moments of m_s = 2.54 mu_B with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, non-magnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study off-on effects of time-reversal symmetry breaking on topological surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structural and electronic properties of ultrathin FeSe films grown on Bi$_2$Se$_3$(0001) studied by STM/STS

We report scanning tunnelling microscopy and spectroscopy (STM/STS) studies on one and two unit cell (UC) high FeSe thin films grown on Bi$_2$Se$_3$(0001). In our thin films, we find the tetragonal phase of FeSe and dumb-bell shaped defects oriented along Se-Se bond directions. In addition, we observe striped moiré patterns with a periodicity of ($7.3\pm 0.1$) nm generated by the mismatch between the FeSe lattice and the Bi$_2$Se$_3$ lattice. We could not find any signature of a superconducting gap in the tunneling spectra measured on the surface of one and two UC thick islands of FeSe down to 6.5 K. The spectra rather show an asymmetric behavior across and a finite density of states at the Fermi level ($E_F$) resembling those taken in the normal state of bulk FeSe.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi$_2$Se$_3$/Mn-Bi$_2$Se$_3$) heterostructures

Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing $n$, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at $n \sim 9\,$QLs. Our results suggest a competition of upwards and downwards band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently.

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preprint2016arXiv

Tuning emergent magnetism in a Hund's impurity

The recently proposed theoretical concept of a Hund's metal is regarded as a key to explain the exotic magnetic and electronic behavior occuring in the strongly correlated electron systems of multiorbital metallic materials. However, a tuning of the abundance of parameters, that determine these systems, is experimentally challenging. Here, we investigate the smallest possible realization of a Hund's metal, a Hund's impurity, realized by a single magnetic impurity strongly hybridized to a metallic substrate. We experimentally control all relevant parameters including magnetic anisotropy and hybridization by hydrogenation with the tip of a scanning tunneling microscope and thereby tune it through a regime from emergent magnetic moments into a multi-orbital Kondo state. Our comparison of the measured temperature and magnetic field dependent spectral functions to advanced many-body theories will give relevant input for their application to non-Fermi liquid transport, complex magnetic order, or unconventional superconductivity.

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preprint2016arXiv

Tunneling into thin superconducting films: interface-induced quasiparticle lifetime reduction

Scanning tunneling spectroscopy measurements of superconducting thin lanthanum films grown on a normal metal tungsten substrate reveal an extraordinarily large broadening of the coherence peaks. The observed broadening corresponds to very short electron-like quasiparticle lifetimes in the tunneling process. A thorough analysis considering the different relaxation processes reveals that the dominant mechanism is an efficient quasiparticle relaxation at the interface between the superconducting film and the underlying substrate. This process is of general relevance to scanning tunneling spectroscopy studies on thin superconducting films and enables measurements of film thicknesses via a spectroscopic method.

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preprint2014arXiv

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconductivity of lanthanum revisited: enhanced critical temperature in the clean limit

The thickness dependence of the superconducting energy gap $Δ_{\rm{La}}$ of double hexagonally close packed (dhcp) lanthanum islands grown on W(110) is studied by scanning tunneling spectroscopy, from the bulk to the thin film limit. Superconductivity is suppressed by the boundary conditions for the superconducting wavefunction at the surface and W/La interface, leading to a linear decrease of the critical temperature $T_c$ as a function of the inverse film thickness. For thick, bulk-like films, $Δ_{\rm{La}}$ and $T_c$ are 40% larger as compared to literature values of dhcp La measured by other techniques. This finding is reconciled by examining the effects of surface contamination as probed by modifications of the surface state, suggesting that the large $T_c$ originates in the superior purity of the samples investigated here.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Screening and atomic-scale engineering of the potential at a topological insulator surface

The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively charged ions are screened by both free electrons residing in the topological surface state as well as band bending induced quantum well states of the conduction band, leading to a surprisingly short screening length. Combining a theoretical description of the potential energy with STM-based atomic manipulation, we demonstrate the ability to create tailored electronic potential landscapes on topological surfaces with atomic-scale control.

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preprint2012arXiv

Controllable magnetic doping of the surface state of a topological insulator

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically doping the topological surface state. For both types of Fe doping, we see no indication of a gap at the Dirac point.

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preprint2012arXiv

Robust Nodal Structure of Landau Level Wave Functions Revealed by Fourier Transform Scanning Tunneling Spectroscopy

Scanning tunneling spectroscopy is used to study the real-space local density of states (LDOS) of a two-dimensional electron system in magnetic field, in particular within higher Landau levels (LL). By Fourier transforming the LDOS, we find a set of n radial minima at fixed momenta for the nth LL. The momenta of the minima depend only on the inverse magnetic length. By comparison with analytical theory and numerical simulations, we attribute the minima to the nodes of the quantum cyclotron orbits, which decouple in Fourier representation from the random guiding center motion due to the disorder. This robustness of the nodal structure of LL wave functions should be viewed as a key property of quantum Hall states.

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preprint2011arXiv

Anomalously large g-factor of single atoms adsorbed on a metal substrate

We have performed inelastic scanning tunneling spectroscopy (ISTS) on individual Fe atoms adsorbed on a Ag(111) surface. ISTS reveals a magnetization excitation with a lifetime of about 400 fsec which decreases linearly upon application of a magnetic field. Astoundingly, we find that the g-factor, which characterizes the shift in energy of the excitation in a magnetic field, is g = 3.1 instead of the regular value of 2. This enhancement can be understood when considering the complete electronic structure of both the Ag(111) surface state and the Fe atom, as shown by ab initio calculations of the magnetic susceptibility.

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preprint2011arXiv

In-plane magnetic anisotropy of Fe atoms on Bi$_2$Se$_3$(111)

The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi$_2$Se$_3$ using local low temperature scanning tunneling microscopy and integral x-ray magnetic circular dichroism techniques. Single Fe adatoms on the Bi$_2$Se$_3$ surface, in the coverage range $\approx 1%$ are heavily relaxed into the surface and exhibit a magnetic easy axis within the surface-plane, contrary to what was assumed in recent investigations on the opening of a gap. Using \textit{ab initio} approaches, we demonstrate that an in-plane easy axis arises from the combination of the crystal field and dynamic hybridization effects.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Correction of systematic errors in scanning tunnelling spectra on semiconductor surfaces: the energy gap of Si(111)-7x7 at 0.3 K

The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the resulting systematic errors in STS data, which is demonstrated for the well known Si(111)-(7x7) surface. The surface has an odd number of electrons per surface unit cell and is metallic above 20 K. We observe an energy gap in the ground state of this surface by STS at 0.3 K. After correction, the measured width of the gap is (70 +- 15) meV which is compatible with previous less precise estimates. No sharp peak of the density of states at the Fermi level is observed, in contrast to proposed models for the Si(111)-(7x7) surface.

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