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J. P. Cascales

J. P. Cascales contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observations.

preprint2012arXiv

Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.