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J. M. Kreikebaum

J. M. Kreikebaum contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Monitoring fast superconducting qubit dynamics using a neural network

Weak measurements of a superconducting qubit produce noisy voltage signals that are weakly correlated with the qubit state. To recover individual quantum trajectories from these noisy signals, traditional methods require slow qubit dynamics and substantial prior information in the form of calibration experiments. Monitoring rapid qubit dynamics, e.g. during quantum gates, requires more complicated methods with increased demand for prior information. Here, we experimentally demonstrate an alternative method for accurately tracking rapidly driven superconducting qubit trajectories that uses a Long-Short Term Memory (LSTM) artificial neural network with minimal prior information. Despite few training assumptions, the LSTM produces trajectories that include qubit-readout resonator correlations due to a finite detection bandwidth. In addition to revealing rotated measurement eigenstates and a reduced measurement rate in agreement with theory for a fixed drive, the trained LSTM also correctly reconstructs evolution for an unknown drive with rapid modulation. Our work enables new applications of weak measurements with faster or initially unknown qubit dynamics, such as the diagnosis of coherent errors in quantum gates.

preprint2022arXiv

Multipartite Entanglement in Rabi Driven Superconducting Qubits

Exploring highly connected networks of qubits is invaluable for implementing various quantum algorithms and simulations as it allows for entangling qubits with reduced circuit depth. Here, we demonstrate a multi-qubit STAR (Sideband Tone Assisted Rabi driven) gate. Our scheme is inspired by the ion qubit Mølmer-Sørensen gate and is mediated by a shared photonic mode and Rabi-driven superconducting qubits, which relaxes restrictions on qubit frequencies during fabrication and supports scalability. We achieve a two-qubit gate with maximum state fidelity of 0.95 in 310 ns, a three-qubit gate with state fidelity 0.905 in 217 ns, and a four-qubit gate with state fidelity 0.66 in 200 ns. Furthermore, we develop a model of the gate that show the four-qubit gate is limited by shared resonator losses and the spread of qubit-resonator couplings, which must be addressed to reach high-fidelity operations.

preprint2020arXiv

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of $O$(100 $μ$s) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of $\pm$ 30%. Inferring a critical current $I_{\rm c}$ variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in $<$ 3.5% relative standard deviation (RSD) in critical current ($\equiv σ_{I_{\rm c}}/\left\langle I_{\rm c} \right\rangle$) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm$^2$. Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown $σ_{I_{\rm c}}/\left\langle I_{\rm c} \right\rangle$ = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having $σ_{I_{\rm c}}/\left\langle I_{\rm c} \right\rangle$ $<$ 1.0% (equivalent to $σ_{f}/\left\langle f \right\rangle$ $<$ 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.