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Source author record

J. L. Reno

J. L. Reno appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elquant-phcond-mat.stat-mechphysics.atom-ph

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Published work

16 published item(s)

preprint2019arXiv

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The HIGFET was specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7 ... and its particle-hole conjugate states at filling factors 1 - nu = 2/3, 3/5, 4/7 ... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1 - nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Detecting weak coupling in mesoscopic systems with a nonequilibrium Fano resonance

A critical aspect of quantum mechanics is the nonlocal nature of the wavefunction, a characteristic that may yield unexpected coupling of nominally-isolated systems. The capacity to detect this coupling can be vital in many situations, especially those in which its strength is weak. In this work we address this problem in the context of mesoscopic physics, by implementing an electron-wave realization of a Fano interferometer using pairs of coupled quantum point contacts (QPCs). Within this scheme, the discrete level required for a Fano resonance is provided by pinching off one of the QPCs, thereby inducing the formation of a quasi-bound state at the center of its self-consistent potential barrier. Using this system, we demonstrate a form of \textit{nonequilibrium} Fano resonance (NEFR), in which nonlinear electrical biasing of the interferometer gives rise to pronounced distortions of its Fano resonance. Our experimental results are captured well by a quantitative theoretical model, which considers a system in which a standard two-path Fano interferometer is coupled to an additional, \textit{intruder}, continuum. According to this theory, the observed distortions in the Fano resonance arise \textit{only} in the presence of coupling to the intruder, indicating that the NEFR provides a sensitive means to infer the presence of weak coupling between mesoscopic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

1D-1D Coulomb Drag Signature of a Luttinger Liquid

We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed in three distinct devices at a temperature $T^* \sim 1.6$ K. This crossover in Coulomb drag behaviour is consistent with Tomonaga-Luttinger liquid models for the 1D-1D drag between quantum wires.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tuning the Fano Resonance with an Intruder Continuum

Through a combination of experiment and theory we establish the possibility of achieving strong tuning of Fano resonances (FRs), by allowing their usual two-path geometry to interfere with an additional, 'intruder', continuum. As the coupling strength to this intruder is varied, we predict strong modulations of the resonance line shape that, in principle at least, may exceed the amplitude of the original FR itself. For a proof-of-concept demonstration of this phenomenon, we construct a nanoscale interferometer from nonlocally coupled quantum point contacts and utilize the unique features of their density of states to realize the intruder. External control of the intruder coupling is enabled by means of an applied magnetic field, in the presence of which we demonstrate the predicted distortions of the FR. This general scheme for resonant control should be broadly applicable to a variety of wave-based systems, opening up the possibility of new applications in areas such as chemical and biological sensing and secure communications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coherent Propagation of Spin Helices in a Quantum-Well Confined Electron Gas

We use phase-resolved transient grating spectroscopy to measure the propagation of spin helices in a high mobility $n$-GaAs/AlGaAs quantum well with an applied in-plane electric field. At relatively low fields helical modes crossover from overdamped excitations where the spin-precession period exceeds the spin lifetime, to a regime of coherent propagation where several spin-precession periods can be observed. We demonstrate that the envelope of a spin polarization packet reaches a current-driven velocity of 10$^7$ cm s$^{-1}$ in an applied field of 70 V cm$^{-1}$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Doppler velocimetry of spin propagation in a two-dimensional electron gas

Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. Here we report the application of Doppler velocimetry to resolve the motion of spin-polarized electrons in GaAs quantum wells driven by a drifting Fermi sea. We find that the spin mobility tracks the high electron mobility precisely as a function of T. However, we also observe that the coherent precession of spins driven by spin-orbit interaction, which is essential for the operation of a broad class of spin logic devices, breaks down at temperatures above 150 K for reasons that are not understood theoretically.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Giant negative magnetoresistance in high-mobility 2D electron systems

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$ K. Unlike the zero-field resistivity which saturates at $T \simeq 2 $ K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires

Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier $\gtrsim$ 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by $\sim$ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy

We use phase-resolved transient grating spectroscopy to measure the drift and diffusion of electron-hole density waves in a semiconductor quantum well. The unique aspects of this optical probe allow us to determine the frictional force between a two-dimensional Fermi liquid of electrons and a dilute gas of holes. Knowledge of electron-hole friction enables prediction of ambipolar dynamics in high-mobility electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Terahertz Coherent Control of a Landau-Quantized Two-Dimensional Electron Gas

We demonstrate coherent control of cyclotron resonance (CR) in a two-dimensional electron gas (2DEG). We use a sequence of terahertz pulses to control the amplitude of CR oscillations in an arbitrary fashion via phase-dependent coherent interactions. We observe a self-interaction effect, where the 2DEG interacts with the terahertz field emitted by itself within the decoherence time, resulting in a revival and collapse of quantum coherence. These observations are accurately describable using {\em single-particle} optical Bloch equations, showing no signatures of electron-electron interactions, which verifies the validity of Kohn's theorem for CR in the coherent regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Direct Measurement of Cyclotron Coherence Times of High-Mobility Two-Dimensional Electron Gases

We have observed long-lived (~30 ps) coherent oscillations of charge carriers due to cyclotron resonance (CR) in high-mobility two-dimensional electrons in GaAs in perpendicular magnetic fields using time-domain terahertz spectroscopy. The observed coherent oscillations were fitted well by sinusoids with exponentially-decaying amplitudes, through which we were able to provide direct and precise measures for the decay times and oscillation frequencies simultaneously. This method thus overcomes the CR saturation effect, which is known to prevent determination of true CR linewidths in high-mobility electron systems using Fourier-transform infrared spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Coupling Remote States through the Continuum: Multi-State Fano Resonances

We demonstrate a fully-tunable multi-state Fano system in which remotely-implemented quantum states interfere with each other through their coupling to a mutual continuum. On tuning these resonances near coincidence a robust avoided crossing is observed, with a distinctive character that confirms the continuum as the source of the coupling. While the continuum often serves as a source of decoherence, our work therefore shows how its presence can instead also be essential to mediate the interaction of quantum states, a result that could allow new approaches to engineer the collective states of nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Observation of Chiral Heat Transport in the Quantum Hall Regime

Heat transport in the quantum Hall regime is investigated using micron-scale heaters and thermometers positioned along the edge of a millimeter-scale two dimensional electron system (2DES). The heaters rely on localized current injection into the 2DES, while the thermometers are based on the thermoelectric effect. In the $ν= 1$ integer quantized Hall state, a thermoelectric signal appears at an edge thermometer only when it is "downstream," in the sense of electronic edge transport, from the heater. When the distance between the heater and the thermometer is increased, the thermoelectric signal is reduced, showing that the electrons cool as they propagate along the edge.

0 citations0 reviewsNo code linkedOpen access