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Researcher profile

J. Kreisel

J. Kreisel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2021arXiv

Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation

Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Phonon Raman scattering of perovskite LaNiO3 thin films

We report an investigation of perovskite-type LaNiO3 thin films by Raman scattering in both various scattering configurations and as a function of temperature. The room-temperature Raman spectra and the associated phonon mode assignment provide reference data for phonon calculations and for the use of Raman scattering for structural investigations of LaNiO3, namely the effect of strain in thin films or heterostructures. The temperature-dependent Raman spectra from 80 to 900 K are characterized by the softening of the rotational A1g mode, which suggest a decreasing rhombohedral distortion towards the ideal cubic structure with increasing temperature.

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preprint2010arXiv

Temperature-dependent Raman scattering of DyScO3 and GdScO3 single crystals

We report a temperature-dependent Raman scattering investigation of DyScO3 and GdScO3 single crystals from room temperature up to 1200 °C. With increasing temperature, all modes decrease monotonously in wavenumber without anomaly, which attests the absence of a structural phase transition. The high temperature spectral signature and extrapolation of band positions to higher temperatures suggest a decreasing orthorhombic distortion towards the ideal cubic structure. Our study indicates that this orthorhombic-to-cubic phase transition is close to or higher than the melting point of both rare-earth scandates (\approx 2100 °C), which might exclude the possibility of the experimental observation of such a phase transition before melting. The temperature-dependent shift of Raman phonons is also discussed in the context of thermal expansion.

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preprint2010arXiv

Temperature-dependent Raman scattering of KTa1-xNbxO3 thin films

We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase transitions of the end-member material KNbO3. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (ferroelectric) to cubic (paraelectric) phase transition is up to 50 K higher in the films when compared to bulk samples. This enhanced ferroelectricity is attributed to biaxial strain in the investigated thin films.

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