BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

J. Fontcuberta

J. Fontcuberta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

Catalog footprint

What is connected

15works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2016arXiv

Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces

Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments at Pt ions and subsequent magnetic-field dependent scattering. It thus follows that either bulk (spin Hall and Inverse spin Hall Effects) or interface (Rashba) spin-orbit related effects dominate the observed magnetoresistance. Furthermore, comparison of bulk magnetization and XMCD data at (Fe,Co)-L2,3 edges suggests the presence of some spin disorder in the CoFe2O4 layer which may be relevant for the observed anomalous non-saturating field-dependence of spin Hall magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

An invisible non-volatile solid-state memory

Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Multiple strain-induced phase transitions in LaNiO3 thin films

Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive mapping of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain which may impact the electronic orbital hierarchy. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room-temperature antiferromagnetic memory resistor

The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure

Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of spintronics whose first commercial applications relied on the AMR. Despite the long history and importance in magnetic sensing and memory technologies, the microscopic understanding of the AMR has struggled to go far beyond the basic notion of a relativistic magnetotransport phenomenon arising from combined effects on diffusing carriers of spin-orbit coupling and broken symmetry of a metallic ferromagnet. Our work demonstrates that even this seemingly generic notion of the AMR phenomenon needs revisiting as we observe the ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM) semiconductor Sr2IrO4 (SIO). Our work opens the recently proposed path for integrating semiconducting and spintronic technologies in AFMs. SIO is a particularly favorable material for exploring this path since its semiconducting nature is entangled with the AFM order and strong spin-orbit coupling. For the observation of the low-field Ohmic AMR in SIO we prepared an epitaxial heterostructure comprising a nano-scale SIO film on top of an epilayer of a FM metal La2/3Sr1/3MnO3 (LSMO). This allows the magnetic field control of the orientation of AFM spins in SIO via the exchange spring effect at the FM-AFM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Orientational tuning of the 2D-superconductivity in LaAlO3/SrTiO3 interfaces

The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significantly larger (d approx. 24 - 30 nm) than previously reported for (001)-oriented LaAlO3/SrTiO3 interfaces (d approx. 10 nm). The more extended superconductivity brings about the absence of violation of the Pauli paramagnetic limit for the upper critical fields, signaling the distinctive nature of the electronic structure of the (110)-oriented interface with respect to their (001)-counterparts

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films

We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate and films to extract reliable unit cell parameters. The implications of this finding for the understanding of strain effects in ultrathin films and interfaces will be underlined

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing individual layers in functional oxide multilayers by wavelength-dependent Raman scattering

Integration of functional oxides on silicon requires the use of complex heterostructures involving oxides of which the structure and properties strongly depend on the strain state and strain-mediated interface coupling. The experimental observation of strain-related effects of the individual components remains challenging. Here we report a Raman scattering investigation of complex multilayer BaTiO3/LaNiO3/CeO2/YSZ thin film structures on silicon. It is shown that the Raman signature of the multilayers differs significantly for three different laser wavelengths (633, 442 and 325 nm). Our results demonstrate that Raman scattering at various wavelengths allows both the identification of the individual layers of a functional oxide multilayers and monitoring their strain state. It is shown that all layers of the investigated multilayer are strained with respect to the bulk reference samples, and that strain induces a new crystal structure in the embedded LaNiO3. Based on this, we demonstrate that Raman scattering at various wavelengths offers a well-adapted, non-destructive probe for the investigation of strain and structure changes, even in complex thin film heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Phase transition close to room temperature in BiFeO3 thin films

BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strain analysis of multiferroic BiFeO3-CoFe2O4 nanostructures by Raman scattering

We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state of the BFO pillars depends on the BFO/CFO ratio with an increasing tensile strain along the out-of-plane direction with decreasing BFO content. Our results demonstrate that Raman scattering allows monitoring strain states in complex 3D multiferroic pillar/matrix composites.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strain-driven non-collinear magnetic ordering in orthorhombic epitaxial YMnO3 thin films

We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from strain-driven breaking of the fully compensated magnetic ordering by pushing magnetic moments away from the antiferromagnetic [010] axis. We show that the resulting canting angle and the subsequent ferromagnetic response, gradually increase (up to ~ 1.2\degree) by compression of the unit cell. We will discuss the relevance of these findings, in connection to the magnetoelectric response of orthorhombic manganites.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ferroelectricity and strain effects in orthorhombic YMnO3 thin films

We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, the ferroelectric order is progressively suppressed. Analysis of structural, dielectric and magnetic data indicates that suppression of ferroelectricity when reducing thickness is accompanied by an enlarged ratio a/b of the in-plane cell parameters of the orthorhombic structure and the appearance of a net magnetization. All results can be well described by considering the multiferroic phase diagram of orthorhombic manganites.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetization Reversal by Electric-Field Decoupling of Magnetic and Ferroelectric Domains Walls in Multiferroic-Based Heterostructures

We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO3 is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and ferromagnetic domains walls. Their distinct dynamics are essential for the observed magnetic switching.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Evidence of strong antiferromagnetic coupling between localized and itinerant electrons in ferromagnetic Sr2FeMoO6

Magnetic dc susceptibility ($χ$) and electron spin resonance (ESR) measurements in the paramagnetic regime, are presented. We found a Curie-Weiss (CW) behavior for $χ$(T) with a ferromagnetic $Θ= 446(5)$ K and $μ_{eff} = 4.72(9) μ_{B}/f.u.$, this being lower than that expected for either $Fe^{3+}(5.9μ_{B})$ or $Fe^{2+}(4.9μ_{B})$ ions. The ESR g-factor $g = 2.01(2)$, is associated with $Fe^{3+}$. We obtained an excellent description of the experiments in terms of two interacting sublattices: the localized $Fe^{3+}$ ($3d^{5}$) cores and the delocalized electrons. The coupled equations were solved in a mean-field approximation, assuming for the itinerant electrons a bare susceptibility independent on $T$. We obtained $χ_{e}^{0} = 3.7$ $10^{-4}$ emu/mol. We show that the reduction of $μ_{eff}$ for $Fe^{3+}$ arises from the strong antiferromagnetic (AFM) interaction between the two sublattices. At variance with classical ferrimagnets, we found that $Θ$ is ferromagnetic. Within the same model, we show that the ESR spectrum can be described by Bloch-Hasegawa type equations. Bottleneck is evidenced by the absence of a $g$-shift. Surprisingly, as observed in CMR manganites, no narrowing effects of the ESR linewidth is detected in spite of the presence of the strong magnetic coupling. These results provide evidence that the magnetic order in $Sr_{2}FeMoO_{6}$ does not originates in superexchange interactions, but from a novel mechanism recently proposed for double perovskites.

0 citations0 reviewsNo code linkedOpen access