Source author record

J. Guettinger

J. Guettinger appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

5works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2016arXiv

Switching off energy decay channels in nanomechanical resonators

Energy decay plays a central role in a wide range of phenomena, such as optical emission, nuclear fission, and dissipation in quantum systems. Energy decay is usually described as a system leaking energy irreversibly into an environmental bath. Here, we report on energy decay measurements in nanomechanical systems based on multi-layer graphene that cannot be explained by the paradigm of a system directly coupled to a bath. As the energy of a vibrational mode freely decays, the rate of energy decay switches abruptly to a lower value. This finding can be explained by a model where the measured mode hybridizes with other modes of the resonator at high energy. Below a threshold energy, modes are decoupled, resulting in comparatively low decay rates and giant quality factors exceeding 1 million. Our work opens up new possibilities to manipulate vibrational states, engineer hybrid states with mechanical modes at completely different frequencies, and to study the collective motion of this highly tunable system.

preprint2011arXiv

Time-resolved charge detection in graphene quantum dots

We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.

preprint2011arXiv

Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of around 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field.

preprint2010arXiv

Spin States in Graphene Quantum Dots

We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected for graphene.

preprint2008arXiv

Tunable Graphene Single Electron Transistor

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e. barrier configurations) we extract a charging energy of 3.4 meV and estimate a characteristic energy scale for the constriction resonances of 10 meV.