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C. Stampfer

C. Stampfer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

40 published item(s)

preprint2022arXiv

Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals

To conduct spin-sensitive transport measurements, a non-local device geometry is often used to avoid spurious voltages that are caused by the flow of charges. However, in the vast majority of reported non-local spin valve, Hanle spin precession, or spin Hall measurements background signals have been observed that are not related to spins. We discuss seven different types of these charge-induced signals and explain how these artifacts can result in erroneous or misleading conclusions when falsely attributed to spin transport. The charge-driven signals can be divided into two groups: Signals that are inherent to the device structure and/or the measurement setup and signals that depend on a common-mode voltage. We designed and built a voltage-controlled current source that significantly diminishes all spurious voltage signals of the latter group in both DC and AC measurements by creating a virtual ground within the non-local detection circuit. This is especially important for lock-in-based measurement techniques, where a common-mode voltage can create a phase-shifted, frequency-dependent signal with an amplitude several orders of magnitude larger than the actual spin signal. Measurements performed on graphene-based non-local spin valve devices demonstrate how all spurious voltage signals that are caused by a common-mode voltage can be completely suppressed by such a current source.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

CVD bilayer graphene spin valves with 26 $μ$m spin diffusion length at room temperature

We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $μ$m at room temperature combined with a charge carrier mobility of $\approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin relaxation in a single-electron graphene quantum dot

The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling, graphene and bilayer graphene (BLG) have long been considered promising platforms for spin qubits. Only recently, it has become possible to control single-electrons in BLG quantum dots (QDs) and to understand their spin-valley texture, while the relaxation dynamics have remained mostly unexplored. Here, we report spin relaxation times ($T_1$) of single-electron states in BLG QDs. Using pulsed-gate spectroscopy, we extract relaxation times exceeding 200 $μ$s at a magnetic field of 1.9 T. The $T_1$ values show a strong dependence on the spin splitting, promising even longer $T_1$ at lower magnetic fields, where our measurements are limited by the signal-to-noise ratio. The relaxation times are more than two orders of magnitude larger than those previously reported for carbon-based QDs, suggesting that graphene is a potentially promising host material for scalable spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fractional quantum Hall effect in CVD-grown graphene

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials

An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally done by changing the charge carrier density of the 2D material via the gate electric field effect. Here, we show that a comparison of gate-dependent measurements, which were acquired under different measurement conditions can encounter significant problems due to the temporal evolution of the charging of trap states inside the dielectric layer or at its interfaces. The impact of, e.g., the gate sweep direction and the sweep rate on the overall gate dependence gets especially prominent in optical measurements due to photo-excitation of donor and acceptor states. Under such conditions the same nominal gate-voltage may lead to different gate-induced charge carrier densities and, hence, Fermi level positions. We demonstrate that a current flow from or even through the dielectric layer via leakage currents can significantly diminish the gate tunability in optical measurements of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metavalent bonding in crystalline solids: how does it collapse?

The chemical bond is one of the most powerful, yet controversial concepts in chemistry, explaining property trends in solids. Recently, a novel type of chemical bonding has been identified in several higher chalcogenides, characterized by a unique property portfolio, unconventional bond breaking and sharing of about one electron between adjacent atoms. Metavalent bonding is a fundamental type of bonding besides covalent, ionic and metallic bonding, raising the pertinent question, if there is a well-defined transition between metavalent and covalent bonding. For three different pseudo-binary lines, namely GeTe1-xSex, Sb2Te3(1-x)Se3x and Bi2-2xSb2xSe3, a sudden drop in several properties, including the optical dielectric constant, the Born effective charge, the electrical conductivity as well as the bond breaking is observed once a critical Se or Sb concentration is reached. This finding provides a blueprint to explore the impact of metavalent bonding on attractive properties utilized in phase change materials and thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport

We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $μ$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity effects due to the substrate. We show that this spin-orbit coupling gives rise to a complex pattern in low perpendicular magnetic fields, increasing the Zeeman splitting in one valley and suppressing it in the other one. In addition, we observe the existence of a spin-polarized channel of 6 e$^2$/h at high in-plane magnetic field and of signatures of interaction effects at the crossings of spin-split subbands of opposite spins at finite magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\,\mathrm{μm}$ at low temperatures and electron-phonon scattering limited transport at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Insulating state in low-disorder graphene nanoribbons

We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $\text{SiO}_2$ or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around $3~$T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of $3-4~ $meV/T reaching values of up to $ 30~\mathrm{meV} $ at $ 9~ $T.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interplay between nanometer-scale strain variations and externally applied strain in graphene

We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the non-linear elastic properties of graphene, both trends together yield a non-monotonic variation of the total displacements with increasing tensile strain. This variation allows to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Size quantization of Dirac fermions in graphene constrictions

Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F \approx 1.5 \times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable mechanical coupling between driven microelectromechanical resonators

We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we show that the comb-drive actuator and the silicon beam behave as two strongly coupled resonators. Interestingly, the effective coupling rate (~ 1.5 MHz) is tunable with the comb-drive actuator (+10%) as well as with a side-gate (-10%) placed close to the silicon beam. In contrast, the effective spring constant of the system is insensitive to either of them and changes only by $\pm$ 0.5%. Finally, we show that the comb-drive actuator can be used to switch between different coupling rates with a frequency of at least 10 kHz.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phase-coherent transport in catalyst-free vapor phase deposited Bi$_2$Se$_3$ crystals

Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall bar geometry. Low temperature magneto-resistance measurements are presented which show a linear magneto-resistance for high magnetic fields and weak anti-localization (WAL) at low fields. Despite an overall strong charge carrier tunability for thinner devices, we find that electron transport is dominated by bulk contributions for all devices. Phase coherence lengths $ł_ϕ$ as extracted from WAL measurements increase linearly with increasing electron density exceeding $1 μ$m at 1.7 K. While $ł_ϕ$ is in qualitative agreement with electron electron interaction-induced dephasing, we find that spin flip scattering processes limit $ł_ϕ$ at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Switchable Coupling of Vibrations to Two-Electron Carbon-Nanotube Quantum Dot States

We report transport measurements on a quantum dot in a partly suspended carbon nanotube. Electrostatic tuning allows us to modify and even switch 'on' and 'off' the coupling to the quantized stretching vibration across several charge states. The magnetic-field dependence indicates that only the two-electron spin-triplet excited state couples to the mechanical motion, indicating mechanical coupling to both the valley degree of freedom and the exchange interaction, in contrast to standard models.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Uniformity of the pseudomagnetic field in strained graphene

We present a study on the uniformity of the pseudomagnetic field in graphene as a function of the relative orientation between the graphene lattice and straining directions. For this, we strained a regular micron-sized graphene hexagon by deforming it symmetrically by displacing three of its edges. By simulations, we found that the pseudomagnetic field is strongest if the strain is applied perpendicular to the armchair direction of graphene. For a hexagon with a side length of 1 ${\rm μ}$m, the pseudomagnetic field has a maximum of 1.2 T for an applied strain of 3.5% and it is uniform (variance $< 1$%) within a circle with a diameter of $\sim 520$ nm. This diameter is on the order of the typical diameter of the laser spot in a state-of-the-art confocal Raman spectroscopy setup, which suggests that observing the pseudomagnetic field in measurements of shifted magneto-phonon resonance is feasible.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices

Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection and detection contacts in a fabricated device. To address this issue, we discuss the influence of spatially inhomogeneous oxide barriers and especially conducting pinholes within the barrier on the background signal in non-local measurements of graphene/MgO/Co spin-valve devices. By both simulations and reference measurements on devices with non-ferromagnetic electrodes, we demonstrate that the background signal can be caused by inhomogeneous current flow through the oxide barriers. As a main result, we demonstrate the existence of charge accumulation next to the actual spin accumulation signal in non-local voltage measurements, which can be explained by a redistribution of charge carriers by a perpendicular magnetic field similar to the classical Hall effect. Furthermore, we present systematic studies on the phase of the low frequency non-local ac voltage signal which is measured in non-local spin measurements when applying ac lock-in techniques. This phase has so far widely been neglected in the analysis of non-local spin transport. We demonstrate that this phase is another hallmark of the homogeneity of the MgO spin injection and detection barriers. We link backgate dependent changes of the phase to the interplay between the capacitance of the oxide barrier to the quantum capacitance of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene

We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_ϕ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_ϕ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_ϕ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Negative quantum capacitance in graphene nanoribbons with lateral gates

We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative quantum capacitance. The emerging non-linear capacitive couplings are investigated in detail. The experimentally relevant relative lever arm, the ratio between the coupling of the different gate structures, is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Raman spectroscopy on mechanically exfoliated pristine graphene ribbons

We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge disorder correlation length is approximately one order of magnitude larger than on previously reported graphene ribbons fabricated by reactive ion etching techniques. This suggests a more regular crystallographic orientation of the non-etched graphene ribbons here presented. We further report on the ribbons width dependence of the line-width and frequency of the long-wavelength optical phonon mode (G-line) and the 2D-line of the studied graphene ribbons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride

Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Etched graphene quantum dots on hexagonal boron nitride

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields

We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene-based charge sensors

We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3*10^-3 e/sqrt{Hz} can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By setting the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-frequency Noise in Individual Carbon Nanotube Field-Effect Transistors with Top, Side and Back Gate Configurations: Effect of Gamma Irradiation

We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and Al2O3. Before treatment, strong generation-recombination (GR) noise components are observed. These data are used to identify several charge traps related to dielectric layers of the FETs by determining their activation energy. Investigation of samples with a single SiO2 dielectric layer as well as with two dielectric layers allows us to separate traps for each of the two dielectric layers. We reveal that each charge trap level observed in the side gate operation splits into two levels in top gate operation due to a different potential profile along the CNT channel. After gamma irradiation, only reduced flicker noise is registered in the noise spectra, which indicates a decrease of the number of charge traps. The mobility, which is estimated to be larger than 2x10^4 cm2V-1s-1 at room temperature, decreases only slightly after radiation treatment demonstrating high radiation hardness of the CNTs. Finally, we study the influence of Schottky barriers at the metal-nanotube interface on the transport properties of FETs analyzing the behavior of the flicker noise component.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport in coupled graphene-nanotube quantum devices

We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically exfoliated graphene. We study the detection of individual charging events in the carbon nanotube quantum dot by a nearby graphene nanoribbon and show that they lead to changes of up to 20% of the conductance maxima in the graphene nanoribbon acting as a good performing charge detector. Moreover, we discuss an electrically coupled graphene-nanotube junction, which exhibits a tunneling barrier with tunneling rates in the low GHz regime. This allows to observe Coulomb blockade on a carbon nanotube quantum dot with graphene source and drain leads.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios

We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constriction is smaller than its width (L<W). In very short constrictions, we observe both resonances due to localized states or charged islands and an elevated overall conductance level (0.1-1e2/h), which is strongly length-dependent in the gap region. This makes very short graphene constrictions interesting for highly transparent graphene tunneling barriers.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Time-resolved charge detection in graphene quantum dots

We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of around 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Observation of excited states in a graphene double quantum dot

We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum capacitance and density of states of graphene

We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin States in Graphene Quantum Dots

We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected for graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transition to Landau Levels in Graphene Quantum Dots

We investigate the electronic eigenstates of graphene quantum dots of realistic size (i.e., up to 80 nm diameter) in the presence of a perpendicular magnetic field B. Numerical tight-binding calculations and Coulomb-blockade measurements performed near the Dirac point exhibit the transition from the linear density of states at B=0 to the Landau level regime at high fields. Details of this transition sensitively depend on the underlying graphene lattice structure, bulk defects, and localization effects at the edges. Key to the understanding of the parametric evolution of the levels is the strength of the chiral-symmetry breaking K-K' scattering. We show that the parametric variation of the level variance provides a quantitative measure for this scattering mechanism. We perform measurements of the parametric motion of Coulomb blockade peaks as a function of magnetic field and find good agreement. We thereby demonstrate that the magnetic-field dependence of graphene energy levels may serve as a sensitive indicator for the properties of graphene quantum dots and, in further consequence, for the validity of the Dirac-picture.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Tunable Graphene Single Electron Transistor

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e. barrier configurations) we extract a charging energy of 3.4 meV and estimate a characteristic energy scale for the constriction resonances of 10 meV.

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preprint2007arXiv

Raman imaging and electronic properties of graphene

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 $μ$m at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate.

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preprint2006arXiv

Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

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