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Q. W. Shi

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Published work

7 published item(s)

preprint2020arXiv

Anisotropic behavior of TiB2 nanoparticles reinforced 2024Al composites rolling sheet

The in-plane anisotropy (IPA) of mechanical properties existed in plate products is often undesired since it limits the industrial application and increases the difficulty of material processing. It is thus one of the important factors which requires strict control during the manufacture of high-performance aluminum alloy plates. The anisotropic behavior of TiB2/2024Al composite rolling sheet under different heat treatment is studied in this article. T4 heat treated specimen shows good isotropy of yield strength and its texture components are significantly weakened compared with traditional Al alloys. The evolution of microstructures for T4 specimen was studied. The submicron TiB2 particles increase the driving force of recrystallization during rolling process and static recrystallization (SRX) is stimulated, thus induces texture randomization. Anisotropic behavior of yield strength occurs in specimen after T3 heat treatment. It is supposed that the difference in the activation of slip system under different loading direction gives rise to this anisotropy.

preprint2011arXiv

Vacancy Induced Splitting of Dirac Nodal Point in Graphene

We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting energy between the two nodal points is proportional to the square root of vacancy concentration. In addition, an extra dispersionless impurity band of zero energy due to particle-hole symmetry is found. Our theory offers an excellent explanation to the recent experiments.

preprint2010arXiv

Accurate evaluation of the Green's function of disordered graphenes

An accurate simulation of Green's function and self-energy function of non-interacting electrons in disordered graphenes are performed. Fundamental physical quantities such as the elastic relaxation time τe, the phase velocity vp, and the group velocity vg are evaluated. New features around the Dirac point are revealed, showing hints that multi-scattering induced hybridization of Bloch states plays an important role in the vicinity of the Dirac point.

preprint2010arXiv

Topological Transition of Graphene from Quantum Hall Metal to Quantum Hall Insulator at $ν=0$

The puzzle of recently observed insulating phase of graphene at filling factor $ν=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the Landau level degeneracy) and random bond fluctuations compete with each other, resulting in a transition from a QH-metal state at relative low field to a QH-insulator state at high enough field at $ν=0$. The critical field that separates QH-metal from QH-insulator depends on the bond fluctuation. The picture explains well why the field required for observing the insulating phase is lower for a cleaner sample.

preprint2008arXiv

Electronic Structure in Gapped Graphene with Coulomb Potential

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

preprint2007arXiv

Quantum Dot in Z-shaped Graphene Nanoribbon

Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying junction length, we can alter the spatial confinement and the number of discrete levels within the junction. In addition, quantum dot can be realized regardless of substrate induced static disorder or irregular edges of the junction. This device can be used to easily design quantum dot devices. This platform can also be used to design zero-dimensional functional nanoscale electronic devices using graphene ribbons.

preprint2006arXiv

Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study

In this paper, a real-space analytical expression for the free Green's function (propagator) of bilayer graphene is derived based on the effective-mass approximation. Green's function displays highly spatial anisotropy with three-fold rotational symmetry. The calculated local density of states (LDOS) of a perfect bilayer graphene produces the main features of the observed scanning tunneling microscopy (STM) images of graphite at low bias voltage. Some predicted features of the LDOS can be verified by STM measurements. In addition, we also calculate the LDOS of bilayer graphene with vacancies by using the multiple-scattering theory (scatterings are localized around the vacancy of bilayer graphene). We observe that the interference patterns are determined mainly by the intrinsic properties of the propagator and the symmetry of the vacancies.