Researcher profile

J. F. Feng

J. F. Feng contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2015arXiv

Spin-flip noise due to nonequilibrium spin accumulation

When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.

preprint2014arXiv

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO$_{x}$-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

preprint2014arXiv

The Increase of the Functional Entropy of the Human Brain with Age

We use entropy to characterize intrinsic ageing properties of the human brain. Analysis of fMRI data from a large dataset of individuals, using resting state BOLD signals, demonstrated that a functional entropy associated with brain activity increases with age. During an average lifespan, the entropy, which was calculated from a population of individuals, increased by approximately 0.1 bits, due to correlations in BOLD activity becoming more widely distributed. We attribute this to the number of excitatory neurons and the excitatory conductance decreasing with age. Incorporating these properties into a computational model leads to quantitatively similar results to the fMRI data. Our dataset involved males and females and we found significant differences between them. The entropy of males at birth was lower than that of females. However, the entropies of the two sexes increase at different rates, and intersect at approximately 50 years; after this age, males have a larger entropy.

preprint2013arXiv

Thermal transport due to quantum interference in magnetic tunnel junctions

We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transparency, the dynamics of thermoelectric properties is observed with the current. Accordingly, a large range of the Seebeck coefficient, 10 - 1000 μV/K, has been obtained in magnetic tunnel junctions.