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X. F. Han

X. F. Han contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Comparison of spin-wave transmission in parallel and antiparallel magnetic configurations

Parallel (P) and antiparallel (AP) configurations are widely applied in magnetic heterostructures and have significant impacts on the spin-wave transmission in magnonic devices. In the present study, a theoretical investigation was conducted into the transmission of exchange-dominated spin waves with nanoscale wavelengths in a type of heterostructure including two magnetic media, of which the magnetization state can be set to the P (AP) configuration by ferromagnetic (antiferromagnetic) interfacial exchange coupling (IEC). The boundary conditions in P and AP cases were derived, by which the transmission and reflection coefficients of spin waves were analytically given and numerically calculated. In the P configuration, a critical angle $θ_{\textrm{c}}$ always exists and has a significant influence on the transmission. Spin waves are refracted and reflected when the incident angle $θ_{\textrm{i}}$ is smaller than the critical angle ($θ_{\textrm{i}} < θ_{\textrm{c}}$), while total reflection occurs as $θ_{\textrm{i}} \geq θ_{\textrm{c}}$. In the AP configuration, the spin-wave polarizations of medium 1 and 2 are inverse, that is, right-handed (RH) and left-handed (LH), leading to the total reflection being independent of $θ_{\textrm{i}}$. As demonstrated by the difference in spin-wave transmission properties between the P ($θ_{\textrm{i}} < θ_{\textrm{c}}$) and AP cases, there is a polarization-dependent scattering. However, as $θ_{\textrm{i}}$ exceeds $θ_{\textrm{c}}$, the P ($θ_{\textrm{i}} > θ_{\textrm{c}}$) case exhibits similarities with the AP case, where the transmitted waves are found to be evanescent in medium 2 and their decay lengths are investigated.

preprint2020arXiv

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.