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X. F. Han

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Published work

15 published item(s)

preprint2021arXiv

Comparison of spin-wave transmission in parallel and antiparallel magnetic configurations

Parallel (P) and antiparallel (AP) configurations are widely applied in magnetic heterostructures and have significant impacts on the spin-wave transmission in magnonic devices. In the present study, a theoretical investigation was conducted into the transmission of exchange-dominated spin waves with nanoscale wavelengths in a type of heterostructure including two magnetic media, of which the magnetization state can be set to the P (AP) configuration by ferromagnetic (antiferromagnetic) interfacial exchange coupling (IEC). The boundary conditions in P and AP cases were derived, by which the transmission and reflection coefficients of spin waves were analytically given and numerically calculated. In the P configuration, a critical angle $θ_{\textrm{c}}$ always exists and has a significant influence on the transmission. Spin waves are refracted and reflected when the incident angle $θ_{\textrm{i}}$ is smaller than the critical angle ($θ_{\textrm{i}} < θ_{\textrm{c}}$), while total reflection occurs as $θ_{\textrm{i}} \geq θ_{\textrm{c}}$. In the AP configuration, the spin-wave polarizations of medium 1 and 2 are inverse, that is, right-handed (RH) and left-handed (LH), leading to the total reflection being independent of $θ_{\textrm{i}}$. As demonstrated by the difference in spin-wave transmission properties between the P ($θ_{\textrm{i}} < θ_{\textrm{c}}$) and AP cases, there is a polarization-dependent scattering. However, as $θ_{\textrm{i}}$ exceeds $θ_{\textrm{c}}$, the P ($θ_{\textrm{i}} > θ_{\textrm{c}}$) case exhibits similarities with the AP case, where the transmitted waves are found to be evanescent in medium 2 and their decay lengths are investigated.

preprint2020arXiv

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.

preprint2016arXiv

Electrical control over perpendicular magnetization switching driven by spin-orbit torques

Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and asymmetrical control over the critical switching current by the bias current with opposite polarities is both realized in Pt/Co/MgO and $α$-Ta/CoFeB/MgO systems, respectively. This research not only identifies the influences of field-like and damping-like torques on switching process but also demonstrates an electrical method to control it.

preprint2016arXiv

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or Mg$_{1-x}$Al$_x$O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

preprint2015arXiv

Determining Spin Polarization of Seebeck Coefficients via Anomalous Nernst Effect

Recently, Seebeck coefficients of ferromagnetic conductors are found to be spin-dependent. However straightforward method of accurately determining its spin polarization is still to be developed. Here, we have derived a linear dependence of anomalous Nernst coefficient on anomalous Hall angle with scaling factor related to spin polarization of Seebeck coefficient, which has been experimentally verified in [Co/Pt]n superlattices. Based on the dependence, we have also evaluated spin polarization of Seebeck coefficient of some ferromagnetic conductors. Besides, we have also found a new mechanism to generate pure spin current from temperature gradient in ferromagnetic/nonmagnetic hybrid system, which could improve efficiency from thermal energy to spin current.

preprint2015arXiv

Giant Magneto-Seebeck Effect in Spin Valves

Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films.

preprint2015arXiv

Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications.

preprint2015arXiv

Observation of pure inverse spin Hall effect in ferromagnetic metals by FM/AFM exchange bias structures

We report that the spin current generated by spin Seebeck effect (SSE) in yttrium iron garnet (YIG) can be detected by a ferromagnetic metal (NiFe). By using the FM/AFM exchange bias structure (NiFe/IrMn), inverse spin Hall effect (ISHE) and planar Nernst effect (PNE) of NiFe can be unambiguously separated, allowing us to observe a pure ISHE signal. After eliminating the in plane temperature gradient in NiFe, we can even observe a pure ISHE signal without PNE from NiFe itself. It is worth noting that a large spin Hall angle (0.098) of NiFe is obtained, which is comparable with Pt. This work provides a kind of FM/AFM exchange bias structures to detect the spin current by charge signals, and highlights ISHE in ferromagnetic metals can be used in spintronic research and applications.

preprint2015arXiv

Spin-flip noise due to nonequilibrium spin accumulation

When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.

preprint2014arXiv

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO$_{x}$-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

preprint2013arXiv

Thermal transport due to quantum interference in magnetic tunnel junctions

We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transparency, the dynamics of thermoelectric properties is observed with the current. Accordingly, a large range of the Seebeck coefficient, 10 - 1000 μV/K, has been obtained in magnetic tunnel junctions.

preprint2012arXiv

Edge superconducting state in Nb thin film with rectangular arrays of antidots

Superconducting Nb thin films with rectangular arrays of submicron antidots have been systemically investigated by transport measurements. In low fields, the magnetoresistance curves demonstrate well-defined dips at integral and rational numbers of flux quanta per unit cell, which corresponds to a superconducting wire network-like regime. When the magnetic field is higher than a saturation field, interstitial vortices interrupt the collective oscillation in low fields and form vortex sublattice, where a larger magnetic field interval is observed. In higher fields, a crossover behavior from the interstitial sublattice state to a single-loop-like state is observed, characterized by oscillations with a period of $Φ_0/πr_{eff}^2$, originating from the existence of edge superconducting states with a size $r_{eff}$ around the antidots.

preprint2012arXiv

Transport Measurements on Nano-engineered Two Dimensional Superconducting Wire Networks

Superconducting triangular Nb wire networks with high normal-state resistance are fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist. Robust magnetoresistance oscillations are observed up to high magnetic fields and maintained at low temperatures, due to the eective reduction of wire dimensions. Well-defined dips appear at integral and rational values (1/2, 1/3, 1/4) of the reduced flux f = Phi/Phi_0, which is the first observation in the triangular wire networks. These results are well consistent with theoretical calculations for the reduced critical temperature as a function of f.

preprint2012arXiv

Wire network behavior in superconducting Nb films with diluted triangular arrays of holes

We present transport measurement results on superconducting Nb films with diluted triangular arrays (honeycomb and kagomé) of holes. The patterned films have large disk-shaped interstitial regions even when the edge-to-edge separations between nearest neighboring holes are comparable to the coherence length. Changes in the field interval of two consecutive minima in the field dependent resistance $R(H)$ curves are observed. In the low field region, fine structures in the $R(H)$ and $T_c(H)$ curves are identified in both arrays. Comparison of experimental data with calculation results shows that these structures observed in honeycomb and kagomé hole arrays resemble those in wire networks with triangular and $T_3$ symmetries, respectively. Our findings suggest that even in these specified periodic hole arrays with very large interstitial regions, the low field fine structures are determined by the connectivity of the arrays

preprint2011arXiv

Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice

Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong 'caging effect' which interstitial vortices are strongly trapped among pinned multivortices.