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J. C. H. Chen

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cond-mat.mes-hall

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preprint2013arXiv

Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure

The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes.

preprint2012arXiv

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

preprint2010arXiv

Fabrication and characterization of an induced GaAs single hole transistor

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.

preprint2009arXiv

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.