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Ivan J. Vera-Marun

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.stat-mech cond-mat.str-el

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preprint2022arXiv

Electronic materials with nanoscale curved geometries

Research into electronic nanomaterials has recently seen a growing focus into the synthesis of structures with unconventional curved geometries including bent wires in planar systems and three-dimensional architectures obtained by rolling up nanomembranes. The inclusion of these geometries has led to the prediction and observation of a series of novel effects that either result from shape-driven modifications of the electronic motion or from an intrinsic change of electronic and magnetic properties due to peculiar confinement effects. Moreover, local strains often generated by curvature also trigger the appearance of new phenomena due to the essential role played by electromechanical coupling in solids. Here we review the recent developments in the discovery of these shape-, confinement- and strain-induced curvature effects at the nanoscale, and discuss their potential use in electronic and spintronic devices.

preprint2022arXiv

Tuneable spin injection in high-quality graphene with one-dimensional contacts

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tuneable spin signal in fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130,000 cm$^2$V$^{-1}$s$^{-1}$ and spin diffusion lengths approaching 20 $μ$m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.

preprint2020arXiv

Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets

Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interactions are essential to quantitatively describe the magnetism of CrI3 but requiring quantum rescaling corrections to reproduce its thermal properties. The quantum nature of the heat bath represented by discrete electron-spin and phonon-spin scattering processes induced the formation of spin fluctuations in the low temperature regime. These fluctuations induce the formation of metastable magnetic domains evolving into a single macroscopic magnetization or even a monodomain over surface areas of a few micrometers. Such domains display hybrid characteristics of Neel and Bloch types with a narrow domain wall width in the range of 3-5 nm. Similar behaviour is expected for the majority of 2D vdW magnets where higher-order exchange interactions are appreciable.

preprint2014arXiv

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications. Introducing monolayer graphene in our device architecture for one-atom-thick conformal source-drain electrodes enables a chemically inert boron nitride dielectric to tightly seal the black phosphorus surface. This architecture, generally applicable for other sensitive two-dimensional crystals, results in stable transport characteristics which are hysteresis free and identical both under high vacuum and ambient conditions. Remarkably, our graphene electrodes lead to contacts not dominated by thermionic emission, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field effect transistor geometry.

preprint2014arXiv

Surface sensitivity of the spin Seebeck effect

We have investigated the influence of the interface quality on the spin Seebeck effect (SSE) of the bilayer system yttrium iron garnet (YIG) - platinum (Pt). The magnitude and shape of the SSE is strongly influenced by mechanical treatment of the YIG single crystal surface. We observe that the saturation magnetic field H_{sat} for the SSE signal increases from 55.3 mT to 72.8 mT with mechanical treatment. The change in the magnitude of H_{sat} can be attributed to the presence of a perpendicular magnetic anisotropy due to the treatment induced surface strain or shape anisotropy in the Pt/YIG system. Our results show that the SSE is a powerful tool to investigate magnetic anisotropy at the interface.

preprint2011arXiv

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trapping mechanism associated with sensitivity of graphene to the local pH.