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Researcher profile

Irene Battisti

Irene Battisti contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elphysics.app-phcond-mat.mes-hallcond-mat.supr-conphysics.ins-det

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Published work

3 published item(s)

preprint2020arXiv

Nanofabricated tips for device-based scanning tunneling microscopy

We report on the fabrication and performance of a new kind of tip for scanning tunneling microscopy. By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Contrary to conventional etched metal wire tips, these can be integrated into lithographically defined electrical circuits. We describe a new fabrication method to create a defined apex on a silicon chip and experimentally demonstrate the high performance of the smart tips, both in stability and resolution. In situ tip preparation methods are possible and we verify that they can resolve the herringbone reconstruction and Friedel oscillations on Au(111) surfaces. We further present an overview of possible applications.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Definition of design guidelines, construction and performance of an ultra-stable scanning tunneling microscope for spectroscopic imaging

Spectroscopic-imaging scanning tunneling microscopy is a powerful technique to study quantum materials, with the ability to provide information about the local electronic structure with subatomic resolution. However, as most spectroscopic measurements are conducted without feedback to the tip, it is extremely sensitive to vibrations coming from the environment. This requires the use of laboratories with low-vibration facilities combined with a very rigid microscope construction. In this article, we report on the design and fabrication of an ultra-stable STM for spectroscopic-imaging measurements that operates in ultra high vacuum and at low temperatures (4 K). We perform finite element analysis calculations for the main components of the microscope in order to guide design choices towards higher stiffness and we choose sapphire as the main material of the STM head. By combining these two strategies, we construct a STM head with measured lowest resonant frequencies above f0=13 kHz for the coarse approach mechanism, a value three times higher than previously reported, and in good agreement with the calculations. With this, we achieve an average vibration level of $\sim$ 6 fm/sqrt(Hz), without a dedicated low-vibration lab. We demonstrate the microscope's performance with topographic and spectroscopic measurements on the correlated metal Sr2RhO4, showing the quasiparticle interference pattern in real and reciprocal space with high signal-to-noise ratio.

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preprint2016arXiv

Universality of pseudogap and emergent order in lightly doped Mott insulators

It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because their on-site Coulomb repulsion U is larger than the kinetic energy gain t. When doping these materials by inserting a small percentage of extra carriers, the electrons become mobile but the strong correlations from the Mott state are thought to survive; inhomogeneous electronic order, a mysterious pseudogap and, eventually, superconductivity appear. How the insertion of dopant atoms drives this evolution is not known, nor whether these phenomena are mere distractions specific to hole-doped cuprates or represent the genuine physics of doped Mott insulators. Here, we visualize the evolution of the electronic states of (Sr1-xLax)2IrO4, which is an effective spin-1/2 Mott insulator like the cuprates, but is chemically radically different. Using spectroscopic-imaging STM, we find that for doping concentration of x=5%, an inhomogeneous, phase separated state emerges, with the nucleation of pseudogap puddles around clusters of dopant atoms. Within these puddles, we observe the same glassy electronic order that is so iconic for the underdoped cuprates. Further, we illuminate the genesis of this state using the unique possibility to localize dopant atoms on topographs in these samples. At low doping, we find evidence for much deeper trapping of carriers compared to the cuprates. This leads to fully gapped spectra with the chemical potential at mid-gap, which abruptly collapse at a threshold of around 4%. Our results clarify the melting of the Mott state, and establish phase separation and electronic order as generic features of doped Mott insulators.

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