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Ioannis Kopsalis

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preprint2014arXiv

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on high-ohmic n-type silicon with two crystal orientations and dif- ferent technological parameters, has been studied for doses between 1 kGy and 1 GGy. The extracted values of oxide-charge and surface-current densi- ties have been used in TCAD simulations, and the layout and technological parameters of the AGIPD pixel sensor optimized. It is found that the op- timized layout for high X-ray doses is significantly different from the one for non-irradiated sensors. First sensors and test structures have been de-livered in early 2013. Measurement results for X-ray doses of 0 to 10 MGy and their comparison to simulations are presented. They demonstrate that the optimization has been successful and that the sensors fulfill the required specifications.

preprint2013arXiv

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high brilliance X-ray pulses per second with duration less than 100 fs. The unique features of the X-ray beam pose major challenges for detectors used at the European XFEL for imaging experiments, in particular a radiation tolerance of silicon sensors for doses up to 1 GGy for 3 years of operation at an operating voltage above 500 V. One of the detectors under development at the European XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which is a hybrid detector system with ASICs bump-bonded to p+n silicon pixel sensors. We have designed the silicon sensors for the AGIPD, which have been fabricated by SINTEF and delivered in the beginning of February of 2013. To demonstrate the performance of the AGIPD sensor with regard to radiation hardness, mini-sensors with the same pixel and guard-ring designs as the AGIPD together with test structures have been irradiated at the beamline P11 of PETRA III with 8 keV and 12 keV monoenergetic X-rays to dose values up to 10 MGy. The radiation hardness of the AGIPD sensor has been proven and all electrical properties are within specification before and after irradiation. In addition, the oxide-charge density and surface-current density from test structures have been characterized as function of the X-ray dose and compared to previous measurements for test structures produced by four vendors.