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Ingyu Kim

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2014arXiv

Electrical control of large magnetization reversal in a helimagnet

In spite of both technical and fundamental importance, reversal of a macroscopic magnetization by an electric field (E) has been limitedly realized and remains as one of great challenges. Here, we report the realization of modulation and reversal of large magnetization (M) by E in a multiferroic crystal Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22, in which a transverse conical spin state exhibits a remanent M and electric polarization below ~150 K. Upon sweeping E between +- 2 MV/m, M is quasi-linearly varied between +- 2 μB/f.u., resulting in the M reversal. Moreover, the remanent M shows non-volatile changes of ΔM = +- 0.15 μB/f.u., depending on the history of the applied electric fields. The large modulation and the non-volatile two-states of M at zero magnetic field are observable up to ~150 K where the transverse conical spin state is stabilized. Nuclear magnetic resonance measurements provide microscopic evidences that the electric field and the magnetic field play an equivalent role, rendering the volume of magnetic domains change accompanied by the domain wall motion. The present findings point to a new pathway for realizing the large magnetization reversal by electric fields at fairly high temperatures.

preprint2012arXiv

Electric field control of nonvolatile four-state magnetization at room temperature

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62 $μ$$_{B}$/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

preprint2010arXiv

Low-magnetic-field control of dielectric constant at room temperature realized in Ba0.5Sr1.5Zn2Fe12O22

We show that room temperature resistivity of Ba0.5Sr1.5Zn2Fe12O22 single crystals increases by more than three orders of magnitude upon being subjected to optimized heat treatments. The increase in the resistivity allows the determination of magnetic field (H)-induced ferroelectric phase boundaries up to 310 K through the measurements of dielectric constant at a frequency of 10 MHz. Between 280 and 310 K, the dielectric constant curve shows a peak centered at zero magnetic field and thereafter decreases monotonically up to 0.1 T, exhibiting a magnetodielectric effect of 1.1%. This effect is ascribed to the realization of magnetic field-induced ferroelectricity at an H value of less than 0.1 T near room temperature. Comparison between electric and magnetic phase diagrams in wide temperature- and field-windows suggests that the magnetic field for inducing ferroelectricity has decreased near its helical spin ordering temperature around 315 K due to the reduction of spin anisotropy in Ba0.5Sr1.5Zn2Fe12O22.

preprint2010arXiv

Realization of giant magnetoelectricity in helimagnets

We show that low field magnetoelectric (ME) properties of helimagnets Ba0.5Sr1.5Zn2(Fe1-xAlx)12O22 can be efficiently tailored by Al-substitution level. As x increases, the critical magnetic field for switching electric polarization is systematically reduced from ~1 T down to ~1 mT, and the ME susceptibility is greatly enhanced to reach a giant value of 2.0 x 10^4 ps/m at an optimum x = 0.08. We find that control of nontrivial orbital moment in the octahedral Fe sites through the Al-substitution is crucial for fine tuning of magnetic anisotropy and obtaining the conspicuously improved ME characteristics.

preprint2009arXiv

Vortex-glass phase transition and superconductivity in an under- doped (Ba,K)Fe2As2 single crystal

Measurements of magnetotransport and current-voltage (I-V) characteristics up to 9 T were used to investigate the vortex phase diagram of an under-doped Measurements of magnetotransport and current-voltage (I-V) characteristics up to 9 T were used to investigate the vortex phase diagram of an under-doped (Ba,K)Fe2As2 single crystal with Tc=26.2 K. It is found that the anisotropy ratio of the upper critical field Hc2 decreases from 4 to 2.8 with decreasing temperature from Tc to 24.8 K. Consistent with the vortex-glass theory, the I-V curves measured at H=9 T can be well scaled with the vortex-glass transition temperature of Tg=20.7 K and critical exponents z=4.1 and v=1. Analyses in different magnetic fields produced almost identical critical exponent values, with some variation in Tg, corroborating the existence of the vortex-glass transition in this under-doped (Ba,K)Fe2As2 single crystal up to 9 T. A vortex phase diagram is presented, based on the evolution of Tg and Hc2 with magnetic field.