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Source author record

Imtiaz Ahmed

Imtiaz Ahmed appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.gen-phcond-mat.mtrl-sciMachine LearningInformation Theorymath.IT

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Published work

8 published item(s)

preprint2022arXiv

A Spatio-temporal Track Association Algorithm Based on Marine Vessel Automatic Identification System Data

Tracking multiple moving objects in real-time in a dynamic threat environment is an important element in national security and surveillance system. It helps pinpoint and distinguish potential candidates posing threats from other normal objects and monitor the anomalous trajectories until intervention. To locate the anomalous pattern of movements, one needs to have an accurate data association algorithm that can associate the sequential observations of locations and motion with the underlying moving objects, and therefore, build the trajectories of the objects as the objects are moving. In this work, we develop a spatio-temporal approach for tracking maritime vessels as the vessel's location and motion observations are collected by an Automatic Identification System. The proposed approach is developed as an effort to address a data association challenge in which the number of vessels as well as the vessel identification are purposely withheld and time gaps are created in the datasets to mimic the real-life operational complexities under a threat environment. Three training datasets and five test sets are provided in the challenge and a set of quantitative performance metrics is devised by the data challenge organizer for evaluating and comparing resulting methods developed by participants. When our proposed track association algorithm is applied to the five test sets, the algorithm scores a very competitive performance.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Neighborhood Structure Assisted Non-negative Matrix Factorization and its Application in Unsupervised Point-wise Anomaly Detection

Dimensionality reduction is considered as an important step for ensuring competitive performance in unsupervised learning such as anomaly detection. Non-negative matrix factorization (NMF) is a popular and widely used method to accomplish this goal. But NMF do not have the provision to include the neighborhood structure information and, as a result, may fail to provide satisfactory performance in presence of nonlinear manifold structure. To address that shortcoming, we propose to consider and incorporate the neighborhood structural similarity information within the NMF framework by modeling the data through a minimum spanning tree. We label the resulting method as the neighborhood structure assisted NMF. We further devise both offline and online algorithmic versions of the proposed method. Empirical comparisons using twenty benchmark datasets as well as an industrial dataset extracted from a hydropower plant demonstrate the superiority of the neighborhood structure assisted NMF and support our claim of merit. Looking closer into the formulation and properties of the neighborhood structure assisted NMF with other recent, enhanced versions of NMF reveals that inclusion of the neighborhood structure information using MST plays a key role in attaining the enhanced performance in anomaly detection.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect

We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum well structure that frequently appears in modern nano-scale devices. This model is equally applicable for both silicon and III-V devices. Unlike other models already available in the literature, our model can accurately predict all the eigen energies without the inclusion of any fitting parameters. The validity of our model has been checked with numerical simulations and the results show significantly better agreement compared to the available methods.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET

In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D Poisson's equation with appropriate boundary conditions, incorporating Young's parabolic approximation. The proposed model illustrates excellent match with the experimental results for both n-channel and p-channel 180nm Flexible-FETs. Threshold voltage variation with several important device parameters (oxide and silicon channel thickness, doping concentration) is observed which yields qualitative matching with results obtained from SILVACO simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled Schrödinger-Poisson equation taking wave function penetration and strain effects into account. Experimental I-V and gate leakage characteristic for p-channel InxGa1-xSb MOSFETs are available in recent literature. However, a self- consistent simulation of C-V characterization and direct tunneling gate leakage current is yet to be done for both n- channel and p-channel InxGa1-xSb surface channel MOSFETs. We studied the variation of C-V characteristics and gate leakage current with some important process parameters like oxide thickness, channel composition, channel thickness and temperature for n-channel MOSFET in this work. Device performance should improve as compressive strain increases in channel. Our simulation results validate this phenomenon as ballistic current increases and gate leakage current decreases with the increase in compressive strain. We also compared the device performance by replacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulation results show that performance is much better with this replacement.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Power Allocation for Conventional and Buffer-Aided Link Adaptive Relaying Systems with Energy Harvesting Nodes

Energy harvesting (EH) nodes can play an important role in cooperative communication systems which do not have a continuous power supply. In this paper, we consider the optimization of conventional and buffer-aided link adaptive EH relaying systems, where an EH source communicates with the destination via an EH decode-and-forward relay. In conventional relaying, source and relay transmit signals in consecutive time slots whereas in buffer-aided link adaptive relaying, the state of the source-relay and relay-destination channels determines whether the source or the relay is selected for transmission. Our objective is to maximize the system throughput over a finite number of transmission time slots for both relaying protocols. In case of conventional relaying, we propose an offline and several online joint source and relay transmit power allocation schemes. For offline power allocation, we formulate an optimization problem which can be solved optimally. For the online case, we propose a dynamic programming (DP) approach to compute the optimal online transmit power. To alleviate the complexity inherent to DP, we also propose several suboptimal online power allocation schemes. For buffer-aided link adaptive relaying, we show that the joint offline optimization of the source and relay transmit powers along with the link selection results in a mixed integer non-linear program which we solve optimally using the spatial branch-and-bound method. We also propose an efficient online power allocation scheme and a naive online power allocation scheme for buffer-aided link adaptive relaying. Our results show that link adaptive relaying provides performance improvement over conventional relaying at the expense of a higher computational complexity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.

0 citations0 reviewsNo code linkedOpen access