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Researcher profile

Ian MacLaren

Ian MacLaren contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phphysics.ins-det

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Published work

2 published item(s)

preprint2020arXiv

Fast Pixelated Detectors in Scanning Transmission Electron Microscopy. Part I: Data Acquisition, Live Processing and Storage

The use of fast pixelated detectors and direct electron detection technology is revolutionising many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical challenges associated with them. These include issues related to hardware control, and the acquisition, real-time processing and visualisation, and storage of data from such detectors. We discuss these problems and present software solutions for them, with a view to making the benefits of new detectors in the context of STEM more accessible. Throughout, we provide examples of the application of the technologies presented, using data from a Medipix3 direct electron detector. Most of our software is available under an open source licence, permitting transparency of the implemented algorithms, and allowing the community to freely use and further improve upon them.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strain analysis of Ge micro disk using precession electron diffraction

The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercut for direct bandgap behaviour under strain. In this study, the strain maps are interpreted and compared with a finite element model (FEM) of the strain in the investigated structure. Results demonstrate that the SiN used as a stressor on top of the Ge disk induces an in-plane strain $ε_{xx}$ of a maximum value of almost 2 % which is also confirmed by FEM simulations. This tensile strain can reduce the difference between the direct and indirect bandgaps leading to direct bandgap radiative transitions, with the potential for applications in strained Ge lasers.

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