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Ian MacLaren

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cond-mat.mtrl-sci physics.app-ph physics.ins-det

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preprint2020arXiv

Fast Pixelated Detectors in Scanning Transmission Electron Microscopy. Part I: Data Acquisition, Live Processing and Storage

The use of fast pixelated detectors and direct electron detection technology is revolutionising many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical challenges associated with them. These include issues related to hardware control, and the acquisition, real-time processing and visualisation, and storage of data from such detectors. We discuss these problems and present software solutions for them, with a view to making the benefits of new detectors in the context of STEM more accessible. Throughout, we provide examples of the application of the technologies presented, using data from a Medipix3 direct electron detector. Most of our software is available under an open source licence, permitting transparency of the implemented algorithms, and allowing the community to freely use and further improve upon them.

preprint2019arXiv

Strain analysis of Ge micro disk using precession electron diffraction

The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercut for direct bandgap behaviour under strain. In this study, the strain maps are interpreted and compared with a finite element model (FEM) of the strain in the investigated structure. Results demonstrate that the SiN used as a stressor on top of the Ge disk induces an in-plane strain $ε_{xx}$ of a maximum value of almost 2 % which is also confirmed by FEM simulations. This tensile strain can reduce the difference between the direct and indirect bandgaps leading to direct bandgap radiative transitions, with the potential for applications in strained Ge lasers.

preprint2016arXiv

Medium range structural order in amorphous tantala spatially resolved with changes to atomic structure by thermal annealing

Amorphous tantala (a-Ta2O5) is an important technological material that has wide ranging applications in electronics, optics and the biomedical industry. It is used as the high refractive index layers in the multi-layer dielectric mirror coatings in the latest generation of gravitational wave interferometers, as well as other precision interferometers. One of the current limitations in sensitivity of gravitational wave detectors is Brownian thermal noise that arises from the tantala mirror coatings. Measurements have shown differences in mechanical loss of the mirror coatings, which is directly related to Brownian thermal noise, in response to thermal annealing. We utilise scanning electron diffraction to perform Fluctuation Electron Microscopy (FEM) on Ion Beam Sputtered (IBS) amorphous tantala coatings, definitively showing an increase in the medium range order (MRO), as determined from the variance between the diffraction patterns in the scan, due to thermal annealing at increasing temperatures. Moreover, we employ Virtual Dark-Field Imaging (VDFi) to spatially resolve the FEM signal, enabling investigation of the persistence of the fragments responsible for the medium range order, as well as the extent of the ordering over nm length scales, and show ordered patches larger than 5 nm in the highest temperature annealed sample. These structural changes directly correlate with the observed changes in mechanical loss.