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Researcher profile

I. Yu. Sagalianov

I. Yu. Sagalianov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

On adatomic-configuration-mediated correlation between electrotransport and electrochemical properties of graphene

The electron-transport properties of adatom-graphene system are investigated for different (random, correlated, and ordered) spatial configurations of adatoms over different types of high symmetry sites with various adsorption heights. K adatoms in monolayer graphene are modeled by the scattering potential adapted from the independent self-consistent ab initio calculations. The results are obtained numerically using the quantum-mechanical Kubo-Greenwood formalism. A band gap may be opened only if ordered adatoms act as substitutional atoms, while there is no band gap opening for adatoms acting as interstitial atoms. The type of adsorption sites strongly affect the conductivity for random and correlated adatoms, but practically does not change the conductivity when they form ordered superstructures with equal periods. Depending on electron density and type of adsorption sites, the conductivity for correlated and ordered adatoms is found to be enhanced in dozens of times as compared to the cases of their random positions. These the correlation and ordering effects manifest weaker or stronger depending on whether adatoms act as substitutional or interstitial atoms. The conductivity approximately linearly scales with adsorption height of random or correlated adatoms, but remains practically unchanged with adequate varying of elevation of ordered adatoms. Correlations between electron transport properties and heterogeneous electron transfer kinetics through K-doped graphene and electrolyte interface are investigated as well. The ferri-/ferrocyanide redox couple is used as an electrochemical benchmark system. K adsorption of graphene electrode results to only slight suppress of the heterogeneous standard rate constant. Band gap, opening for ordered and strongly short-range scatterers, has a strong impact on the dependence of the electrode reaction rate as a function of electrode potential.

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preprint2014arXiv

Configurations of structural defects in graphene and their effects on its transport properties

The chapter combines analytical (statistical-thermodynamic and kinetic) with numerical (Kubo-Greenwood-formalism-based) approaches used to ascertain an influence of the configurations of point (impurities, vacancies) and line (grain boundaries, atomic steps) defects on the charge transport in graphene. Possible substitutional and interstitial graphene-based superstructures are predicted and described. The arrangements of dopants over sites or interstices related with interatomic-interaction energies governing the configurations of impurities. Depending on whether the interatomic interactions are short- or long-range, the low-temperature stability diagrams in terms of interaction-energy parameters are obtained. The dominance of intersublattice interactions in competition with intrasublattice ones results in a nonmonotony of ordering-process kinetics. Spatial correlations of impurities do not affect the electronic conductivity of graphene for the most important experimentally-relevant cases of point defects, neutral adatoms and screened charged impurities, while atomic ordering can give rise in the conductivity up to tens times for weak and strong short-range potentials. There is no ordering effect manifestation for long-range potentials. The anisotropy of the conductivity along and across the line defects is revealed and gives rise in the conductivity of graphene with correlated line defects as compared with the case of random ones. Simultaneously correlated (and/or ordered) point and line defects in graphene can give rise in the conductivity up to hundreds times vs. their random distribution. On an example of different B or N doping configurations in graphene, results from the Kubo-Greenwood approach are compared with those obtained from DFT method.

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preprint2014arXiv

Effects of nitrogen-doping configurations with vacancies on conductivity in graphene

We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the quantum-mechanical Kubo-Greenwood formalism. Nitrogen substitutions in graphene lattice are modelled by the scattering potential adopted from the independent self-consistent ab initio calculations. Variety of quantitative and qualitative changes in the conductivity behaviour are revealed for both graphite- and pyridine-type N defects in graphene. For the most common graphite-like configurations in the N-doped graphene, we also consider cases of correlation and ordering of substitutional N atoms. The conductivity is found to be enhanced up to several times for correlated N dopants and tens times for ordered ones as compared to the cases of their random distributions. The presence of vacancies in the complex defects as well as ordering of N dopants suppresses the electron-hole asymmetry of the conductivity in graphene.

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