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I. van Weperen

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cond-mat.mes-hall quant-ph

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preprint2015arXiv

Spin-orbit interaction in InSb nanowires

We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.

preprint2013arXiv

Electrical control over single hole spins in nanowire quantum dots

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.

preprint2011arXiv

Conditional operation of a spin qubit

We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways to multi-qubit control and implementation of quantum algorithms with spin qubits.