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Researcher profile

E. P. A. M. Bakkers

E. P. A. M. Bakkers contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-conphysics.optics

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Published work

4 published item(s)

preprint2021arXiv

Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch

A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally strong yet highly tunable with gate voltages. Such electrical control would make it possible to switch on demand between qubit idling and manipulation modes. Here, we demonstrate ultrafast and universal quantum control of a hole spin qubit in a germanium/silicon core/shell nanowire, with Rabi frequencies of several hundreds of megahertz, corresponding to spin-flipping times as short as ~1 ns - a new record for a single-spin qubit. Next, we show a large degree of electrical control over the Rabi frequency, Zeeman energy, and coherence time - thus implementing a switch toggling from a rapid qubit manipulation mode to a more coherent idling mode. We identify an exceptionally strong but gate-tunable spin-orbit interaction as the underlying mechanism, with a short associated spin-orbit length that can be tuned over a large range down to 3 nm for holes of heavy-hole mass. Our work demonstrates a spin-orbit qubit switch and establishes hole spin qubits defined in one-dimensional germanium/silicon nanostructures as a fast and highly tunable platform for quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.

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preprint2019arXiv

Erasing odd-parity states in semiconductor quantum dots coupled to superconductors

Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations.

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