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S. R. Plissard

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Published work

7 published item(s)

preprint2019arXiv

Erasing odd-parity states in semiconductor quantum dots coupled to superconductors

Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations.

preprint2015arXiv

Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson elements

We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively-shunted single elements behave as transmon qubits with electrically tunable transition frequencies. Two-element circuits also exhibit transmon-like behavior near zero applied flux, but behave as flux qubits at half the flux quantum, where non-sinusoidal current-phase relations in the elements produce a double-well Josephson potential. These hybrid Josephson elements are promising for applications requiring microwave superconducting circuits operating in magnetic field.

preprint2015arXiv

Spin-orbit interaction in InSb nanowires

We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.

preprint2013arXiv

Electrical control over single hole spins in nanowire quantum dots

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.

preprint2012arXiv

Fast spin-orbit qubit in an indium antimonide nanowire

Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on Ramsey fringe measurements, we extract a coherence time T_2* = 8 +/- 1 ns at a driving frequency of 18.65 GHz. Applying a Hahn echo sequence extends this coherence time to 35 ns.

preprint2012arXiv

Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices

Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.

preprint2012arXiv

Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires

Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.