Source author record

I. V. Soldatov

I. V. Soldatov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2010arXiv

Analysis of homogeneity of 2D electron gas at decreasing of electron density

We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.

preprint2010arXiv

Energy relaxation rate of 2D hole gas in GaAs/InGaAs/GaAs quantum well within wide range of conductivitiy

The nonohmic conductivity of 2D hole gas (2DHG) in single $GaAsIn_{0.2}Ga_{0.8}AsGaAs$ quantum well structures within the temperature range of 1.4 - 4.2K, the carrier's densities $p=(1.5-8)\cdot10^{15}m^{-2}$ and a wide range of conductivities $(10^{-4}-100)G_0$ ($G_0=e^2/π\,h$) was investigated. It was shown that at conductivity $σ>G_0$ the energy relaxation rate $P(T_h,T_L)$ is well described by the conventional theory (P.J. Price J. Appl. Phys. 53, 6863 (1982)), which takes into account scattering on acoustic phonons with both piezoelectric and deformational potential coupling to holes. At the conductivity range $0.01G_0<σ<G_0$ energy the relaxation rate significantly deviates down from the theoretical value. The analysis of $\frac{dP}{dσ}$ at different lattice temperature $T_L$ shows that this deviation does not result from crossover to the hopping conductivity, which occurs at $σ<10^{-2}$, but from the Pippard ineffectiveness.