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Researcher profile

I. S. Strygin

I. S. Strygin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2023arXiv

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.

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preprint2021arXiv

Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers

The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in τt and τq with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in τt/τq observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in τt more considerably than an increase in τq.

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preprint2021arXiv

Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots

The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated antidot lattice are observed only for the first subband. It is found that microwave irradiation under the cyclotron resonance condition results in the formation of resistance oscillations periodic in the inverse magnetic field in the region of the main commensurability peak. It is established that the period of these oscillations corresponds to the period of magneto-intersubband oscillations. The observed effect is explained by the increase in the rate of intersubband scattering caused by the difference between the electron heating in the subbands E1 and E2.

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