Researcher profile

A. M. Diakonov

A. M. Diakonov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2014arXiv

Contactless Measurement of AC Conductance in Quantum Hall Structures

We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized $p$-SiGe/Ge/SiGe heterostructure.

preprint2012arXiv

Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.

preprint2009arXiv

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure

Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined.

preprint1997arXiv

The investigation of the high frequency hopping conductivity in two- and three-dimensional electron gas by an acoustic method

High-frequency (HF) conductivity ($σ_{hf}$) measured by an acoustical method has been studied in GaAs/AlGaAs heterostructures in a linear and nonlinear regime on acoustic power. It has been shown that in the quantum Hall regime at magnetic fields corresponding to the middle of the Hall plateaus the HF conductivity is determined by the sum of the conductivity of 2-dimensional electrons in the high-mobility channel and the hopping conductivity of the electrons in the doped thick AlGaAs layer. The dependence of these conductivities on a temperature is analyzed. The width of the Landau level broadened by the impurity random potential is determined.

preprint1997arXiv

The nonlinear effects in 2DEG conductivity investigation by an acoustic method

The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure were determined by an acoustical (contactless) method in the delocalized electrons region ($B\le$2.5T). Nonlinear effects in Surface Acoustic Wave (SAW) absorption by 2DEG are determined by the electron heating in the electric field of SAW, which may be described in terms of electron temperature $T_e$. The energy relaxation time $τ_ε$ is determined by the scattering at piezoelectric potential of acoustic phonons with strong screening. At different SAW frequencies the heating depends on the relationship between $ωτ_ε$ and 1 and is determined either by the instantaneously changing wave field ($ωτ_ε$$<1$), or by the average wave power ($ωτ_ε$$>1$).