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Researcher profile

I. J. Luxmoore

I. J. Luxmoore contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

4 published item(s)

preprint2013arXiv

Waveguide-Coupled Photonic Crystal Cavity for Quantum Dot Spin Readout

We present a waveguide-coupled photonic crystal H1 cavity structure in which the orthogonal dipole modes couple to spatially separated photonic crystal waveguides. Coupling of each cavity mode to its respective waveguide with equal efficiency is achieved by adjusting the position and orientation of the waveguides. The behavior of the optimized device is experimentally verified for where the cavity mode splitting is larger and smaller than the cavity mode linewidth. In both cases, coupled Q-factors up to 1600 and contrast ratios up to 10 are achieved. This design may allow for spin state readout of a self-assembled quantum dot positioned at the cavity center or function as an ultra-fast optical switch operating at the single photon level.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coherent optical control of the spin of a single hole in a quantum dot

We demonstrate coherent optical control of a single hole spin confined to an InAs/GaAs quantum dot. A superposition of hole spin states is created by fast (10-100 ps) dissociation of a spin-polarized electron-hole pair. Full control of the hole-spin is achieved by combining coherent rotations about two axes: Larmor precession of the hole-spin about an external Voigt geometry magnetic field, and rotation about the optical-axis due to the geometric phase shift induced by a picosecond laser pulse resonant with the hole-trion transition.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.

0 citations0 reviewsNo code linkedOpen access