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J. Puebla

J. Puebla appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2021arXiv

Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light-matter coupling

Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional optical microcavity. We find robust spin-susceptibility of the 2DEG to simultaneously enhance and suppress trion-polariton formation in opposite photon helicities. This leads to observation of a giant effective valley Zeeman splitting for trion-polaritons (g-factor >20), exceeding the purely trionic splitting by over five times. Going further, we observe robust effective optical non-linearity arising from the highly non-linear behaviour of the valley-specific strong light-matter coupling regime, and allowing all-optical tuning of the polaritonic Zeeman splitting from 4 to >10 meV. Our experiments lay the groundwork for engineering quantum-Hall-like phases with true unidirectionality in monolayer semiconductors, accompanied by giant effective photonic non-linearities rooted in many-body exciton-electron correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation

We study experimentally the dependence of dynamic nuclear spin polarization on the power of non-resonant optical excitation in two types of individual neutral semiconductor quantum dots: InGaAs/GaAs and GaAs/AlGaAs. We show that the mechanism of nuclear spin pumping via second order recombination of optically forbidden (''dark'') exciton states recently reported in InP/GaInP quantum dots [Phys. Rev. B 83, 125318 (2011)] is relevant for material systems considered in this work. In the InGaAs/GaAs dots this nuclear spin polarization mechanism is particularly pronounced, resulting in Overhauser shifts up to ~80 micro-eV achieved at optical excitation power ~1000 times smaller than the power required to saturate ground state excitons. The Overhauser shifts observed at low-power optical pumping in the interface GaAs/AlGaAs dots are generally found to be smaller (up to ~40 micro-eV). Furthermore in GaAs/AlGaAs we observe dot-to-dot variation and even sign reversal of the Overhauser shift which is attributed to dark-bright exciton mixing originating from electron-hole exchange interaction in dots with reduced symmetry. Nuclear spin polarization degrees reported in this work under ultra-low power optical pumping are comparable to those achieved by techniques such as resonant optical pumping or above-gap pumping with high power circularly polarized light. Dynamic nuclear polarization via second-order recombination of ''dark'' excitons may become a useful tool in single quantum dot applications, where manipulation of the nuclear spin environment or electron spin is required.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.

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preprint2012arXiv

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures

Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Alternative non-invasive techniques such as optically detected nuclear magnetic resonance (ODNMR) so far proved difficult in semiconductor nano-structures due to significant strain-induced quadrupole broadening of the NMR spectra. Here, we develop new high sensitivity techniques that move ODNMR to a new regime, allowing high resolution spectroscopy of as few as 100000 quadrupole nuclear spins. By applying these techniques to individual strained self-assembled quantum dots, we measure strain distribution and chemical composition in the volume occupied by the confined electron. Furthermore, strain-induced spectral broadening is found to lead to suppression of nuclear spin magnetization fluctuations thus extending spin coherence times. The new ODNMR methods have potential to be applied for non-invasive investigations of a wide range of materials beyond single nano-structures, as well as address the task of understanding and control of nuclear spins on the nanoscale, one of the central problems in quantum information processing.

0 citations0 reviewsNo code linkedOpen access