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Researcher profile

I. A. Kokurin

I. A. Kokurin contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Comment on "HADOKEN: An open-source software package for predicting electron confinement effects in various nanowire geometries and configurations"

In a recent work [C. Chevalier, B. M. Wong, Comput. Phys. Commun. ${\bf 274}$, 108299 (2022); arXiv: 2203.05233 [cond-mat.mes-hall]] the interesting and popular problem was considered. Authors attempted to solve the self-consistent Schrödinger-Poisson problem for an effective mass electron in a core-shell semiconductor nanowire. The corresponding MATLAB-based software package was presented. However, an incorrect solution of the Schrödinger equation invalidates the whole result. Here we point out the corresponding error and possible ways to fix it.

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preprint2021arXiv

Electronic states in cylindrical core-multi-shell nanowire

The recent advances in nanowire (NW) growth technology have made possible the growth of more complex structures such as core-multi-shell (CMS) NWs. We propose the approach for calculation of electron subbands in cylindrical CMS NWs within the simple effective mass approximation. Numerical results are presented for ${\rm GaAs/Al_{0.3}Ga_{0.7}As}$ radial heterostructure with AlGaAs-core and 4 alternate GaAs and AlGaAs shells. The influence of an effective mass difference in heterolayers is discussed.

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preprint2021arXiv

Electronic states in nanowires with hexagonal cross-section

The electron spectrum in a uniform nanowire with a hexagonal cross-section is calculated by means of a numerical diagonalization of the effective-mass Hamiltonian. Two basis sets are utilized. The wave-functions of low-lying states are calculated and visualized. The approach has an advantage over mesh methods based on finite-differences (or finite-elements) schemes: non-physical solutions do not arise. Our scheme can be easily generalized to the case of multi-band (Luttinger or Kane) ${\bf k}\cdot{\bf p}$ Hamiltonians. The external fields (electrical, magnetic or strain) can be consistently introduced into the problem as well.

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preprint2020arXiv

Sign-reversal electron magnetization in Mn-doped semiconductor structures

The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.

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