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Hui-Min Zhang

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat.mes-hall hep-th

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preprint2016arXiv

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium (K)-doped FeSe ultra-thin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-Tc dome, whereas in the heavily electron-doped higher-Tc dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ~ 14 meV, irrespective of film thickness, verifying the higher-Tc superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase has stepped towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

preprint2016arXiv

Visualizing the elongated vortices in $γ$-Ga nanostrips

We study the magnetic response of superconducting $γ$-Ga via low temperature scanning tunneling microscopy and spectroscopy. The magnetic vortex cores rely substantially on the Ga geometry, and exhibit an unexpectedly-large axial elongation with aspect ratio up to 40 in rectangular Ga nano-strips (width $l$ $<$ 100 nm). This is in stark contrast with the isotropic circular vortex core in a larger round-shaped Ga island. We suggest that the unusual elongated vortices in Ga nanostrips originate from geometric confinement effect probably via the strong repulsive interaction between the vortices and Meissner screening currents at the sample edge. Our finding provides novel conceptual insights into the geometrical confinement effect on magnetic vortices and forms the basis for the technological applications of superconductors.

preprint2015arXiv

Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe$_2$ ultrathin films

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and interstitial, respectively. By means of scanning tunneling microscopy, we demonstrate that the well-established charge density waves can survive in single unit-cell (one triple layer) regime, and find a gradual reduction in their correlation length as the density of surface defects in TiSe2 ultrathin films increases. Our findings offer important insights into the nature of charge density wave in TiSe2, and also pave a material foundation for potential applications based on the collective electronic states.

preprint2014arXiv

Direct observation of quantum confinement of massless Dirac fermions in a topological insulator

Since the discovery of topological insulators (TIs)1,2, the peculiar nature of their chiral surface states has been experimentally demonstrated both in bulk and in film materials with open boundaries3,4. Closed boundary on a TI surface may intrigue more interesting phenomena such as quantum confinement of massless Dirac fermions (DFs), which is analogous to the quantum corral (QC) for massive free electrons on a metal surface5-10. To date, it keeps a highly stringent challenge to realize a true Dirac QC due to the unusual transmitting power of a massless fermion. Through heteroepitaxially growing a Bi bilayer on the Bi2Te3 surface with appropriate coverage, here we demonstrate the realization of a true Dirac QC. Specifically, spectacular maps of quantum interference in equilateral triangle-shaped QCs surrounded by Bi bilayers are directly visualized by using a low-temperature scanning tunneling microscope. The present success is ascribed to a perfect orientation matching between the QC boundary and the stationary-phase scattering of massless DFs. In addition, the quasiparticle lifetime of the confined DFs is also systematically measured and analyzed.

preprint2014arXiv

Strain driven sequential magnetic transitions in strained GdTiO3 on compressive substrates: a first-principles study

The compressive strain effects on the magnetic ground state and electronic structure of strained GdTiO 3 have been studied by the first-principles method. Different from the congeneric YTiO3 and LaTiO3 cases both of which becomes the A-type antiferromagnetism on the (001) LaAlO3 substrate despite their contrastive magnetism, the ground state of strained GdTiO3 on the LaAlO3 substrate changes from the original ferromagnetism to G-type antiferromagnetim, instead of the A-type one although Gd 3+ is between Y3+ and La3+. Only when the in-plane compressive strain is large enough, e.g. on the (001) YAlO3 substrate, the ground state finally becomes the A-type one. The band structure calculation shows that these compressive strained GdTiO3 remain insulating, although the band gap changes a little in these strained GdTiO3.

preprint1997arXiv

Induced Gauge Structure of Quantum Mechanics on $S^D$

The Ohnuki-Kitakado (O-K) scheme of quantum mechanics on $S^D$ embedded in $R^{D+1}$ is investigated. Generators satisfying the O-K algebra are written down explicitly in term of the induced gauge potential. A direct method is developed to obtain the generators in covariant form. It is seen that there exists an induced gauge configuration which is trivial on $S^D$ but might cause a nontrivial physical effect in $R^{D+1}$. The relation of the O-K scheme to extended objects such as the 't Hooft-Polyakov monopole is discussed.