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Hu-Jong Lee

Hu-Jong Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-scicond-mat.str-el

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Published work

21 published item(s)

preprint2019arXiv

Evidence of Higher Order Topology in Multilayer WTe$_2$ from Josephson Coupling through Anisotropic Hinge States

The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get annihilated. However, the detection of these hinge states is difficult in the presence of the semimetallic behaviour of the bulk. Here, we spatially resolved the hinge states by analysing the magnetic field interference of supercurrent in Nb-WTe$_2$-Nb proximity Josephson junctions. The Josephson current along the a-axis of the WTe$_2$ crystal, but not along the b-axis, showed sharp enhancements at the edges of the junction; the amount of enhanced Josephson current was comparable to the upper limits of a single 1D conduction channel. Our experimental observations provide evidence of the higher order topological phase in WTe$_2$ and its corresponding anisotropic topological hinge states, in good agreement with theoretical calculations. Our work paves the way for hinge transport studies on topological semimetals in superconducting heterostructures, including their topological superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Continuous and reversible tuning of the disorder-driven superconductor-insulator transition in bilayer graphene

The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor-insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of the band gap and the charge carrier density. In the presence of a static disorder potential, Andreev-paired carriers formed close to the Fermi level in bilayer graphene constitute a randomly distributed network of proximity-induced superconducting puddles. The landscape of the network was easily tuned by electrical gating to induce percolative clusters at the onset of superconductivity. This is evidenced by scaling behavior consistent with the classical percolation in transport measurements. At lower temperatures, the solely electrical tuning of the disorder-induced landscape enables us to observe, for the first time, a crossover from classical to quantum percolation in a single device, which elucidates how thermal dephasing engages in separating the two regimes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of negative refraction of Dirac fermions in graphene

Half a century ago, Veselago proposed left-handed materials with negative permittivity and permeability, in which waves propagate with phase and group velocities in opposite directions. Significant work has been undertaken to attain this left-handed response, such as establishing a negative refractive index in so-called metamaterials, which consist of periodic sub-wavelength structures. However, an electronic counterpart has not been demonstrated owing to difficulties in creating repeated structures smaller than the electronic Fermi wavelength (λ_F) of the order ~ 10 nm. Here, without needing to engineer sub-wavelength structures, we demonstrate negative refractive behaviour of Dirac fermions in graphene, exploiting its unique relativistic band structure. Analysis of both electron focusing through a n-p-n flat lens and negative refraction across n-p junctions confirms left-handed behaviour in the electronic system. This new approach to electronic optics is of particular relevance to the on-going efforts to develop novel quantum devices with emerging layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fano resonance in Raman scattering of graphene

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Breakdown of the interlayer coherence in twisted bilayer graphene

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even in an atomic length scale of layer separation in twisted bilayer graphene. The interlayer resistivity of twisted bilayer graphene is much higher than the c-axis resistivity of Bernal-stacked graphite, and exhibits strong dependence on temperature as well as on external electric fields. These results suggest that the graphene layers are significantly decoupled by rotation and incoherent conduction is a main transport channel between the layers of twisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals

Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned Hall resistivity measurements, we reliably separated the surface conduction of the topological nature from both the bulk conduction and topologically trivial surface conduction. We minimized the bulk conduction in the crystals and back-gate tuned the Fermi level to the topological bottom-surface band while keeping the top surface insensitive to back-gating with the optimal crystal thickness of ~?100 nm. We argue that the WAL effect occurring by the coherent diffusive motion of carriers in relatively low magnetic fields is more essential than other transport tools such as the Shubnikov-de Hass oscillations for confirming the conduction by the topologically protected surface state. Our approach provides a highly coherent picture of the surface transport properties of TIs and a reliable means of investigating the fundamental topological nature of surface conduction and possible quantum-device applications related to momentum-locked spin polarization in surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Above-gap Conductance Anomaly Studied in Superconductor-graphene-superconductor Josephson Junctions

We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular magnetic field H to the graphene. In high bias above the superconducting gap voltage, however, we also observed an anomalous jump of the differential conductance, the voltage position of which is sensitive to the backgate voltage Vg. Our extensive study with varying Vg, temperature, and H reveals that the above-gap structure takes place at a characteristic power P*, which is irrespective of Vg for a given junction. Temperature and H dependences of P* are well explained by the increase of the electron temperature in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Absence of Tunneling Character in c-axis Transport of SmFeAsO0.85 Single Crystals

We made electrical transport measurements along the c-axis of SmFeAsO0.85 single crystals, in both three- and four-terminal configurations, focusing on examining the possible formation of Josephson coupling between FeAs superconducting layers. Anisotropic bulk superconductivity was observed along the c-axis, but without Josephson coupling, as confirmed by the absence of both the hysteresis in current-voltage curves and the modulation of the critical current by the in-plane magnetic fields. The variation of the critical currents for different magnetic-field directions gives the anisotropy ratio of 5. This three-dimensional electronic structure of our iron pnictide superconductors is in clear contrast to the two-dimensional one observed in the cuprate superconductors, another stacked superconducting system.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very distinctive from top-gated devices. It was caused as the electric field arising from the global back gate is strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrically Tunable Macroscopic Quantum Tunneling in a Graphene-based Josephson Junction

Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover temperature for MQT and the quantized level spacing are controlled with the gate voltage, implying its potential application to gate-tunable superconducting quantum bits.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction

Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene

Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a high carrier density shows a linear temperature dependence, which demonstrates a weak electron-phonon interaction in the bilayer graphene. For a low carrier density, a deviation from the Mott relation is observed at high temperatures and is attributed to the low Fermi temperature in the bilayer graphene. Oscillating TEP and the Nernst effect for varying carrier density, observed in a high magnetic field, are qualitatively explained by the two dimensionality of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Coexisting multiple dynamic states generated by magnetic field in Bi-2212 stacked Josephson junctions

Josephson vortices in naturally stacked Bi-2212 tunneling junctions display rich dynamic behavior that derives from the coexistence of three basic states: static Josephson vortex lattice, coherently moving lattice, and incoherent quasiparticle tunneling state. Rich structure of hysteretic branches observed in the current-voltage characteristics can be understood as combinatorial combinations of these three states which are realized in different junctions and evolve separately with magnetic field and bias current. In particular, the multiple Josephson-vortex-flow branches at low bias currents arise from the individual depinning of Josephson vortex rows in each junction.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of chiral quantum-Hall edge states in graphene

In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields ($\gtrsim$25 T).

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quantum Hall resistances of multiterminal top-gated graphene device

Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science {\bf 317}, 638 (2007); B. Özyilmaz \textit{et al.}, Phys. Rev. Lett. {\bf 99}, 166804 (2007)], asymmetric QH resistances are observed, which provide information on reflection as well as transmission of the QH edge states. Most quantized values of resistances are well analyzed by the assumption that all edge states are equally populated. Contrary to the expectation, however, a 5/2 transmission of the edge states is also found, which may be caused by incomplete mode mixing and/or by the presence of counter-propagating edge states. This four-terminal scheme can be conveniently used to study the edge-state equilibration in locally gated graphene devices as well as mono- and multi-layer graphene hybrid structures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Two-gap and paramagnetic pair-breaking effects on upper critical field of SmFeAsO$_{0.85}$ and SmFeAsO$_{0.8}$F$_{0.2}$ single crystals

We investigated the temperature dependence of the upper critical field [$H_{c2}(T)$] of fluorine-free SmFeAsO$_{0.85}$ and fluorine-doped SmFeAsO$_{0.8}$F$_{0.2}$ single crystals by measuring the resistive transition in low static magnetic fields and in pulsed fields up to 60 T. Both crystals show that $H_{c2}(T)$'s along the c axis [$H_{c2}^c(T)$] and in an $ab$-planar direction [$H_{c2}^{ab}(T)$] exhibit a linear and a sublinear increase, respectively, with decreasing temperature below the superconducting transition. $H_{c2}(T)$'s in both directions deviate from the conventional one-gap Werthamer-Helfand-Hohenberg theoretical prediction at low temperatures. A two-gap nature and the paramagnetic pair-breaking effect are shown to be responsible for the temperature-dependent behavior of $H_{c2}^c$ and $H_{c2}^{ab}$, respectively.

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preprint2008arXiv

High-pressure growth of fluorine-free SmFeAsO$_{1-x}$ superconducting single crystals

Superconducting single crystals of SmFeAsO$_{1-x}$ without fluorine doping were grown at a pressure of 3.3 GPa and a temperature of 1350-1450 $^\circ$C by using the self-flux method. Plate-like single crystals of a few-150 $μ$m in their lateral size were obtained. Single crystals showed the superconducting transition at about 53.5 K with a narrow transition width of 0.5 K. The synchrotron-irradiated x-ray diffractometry patterns and high-angle-annular-dark-field scanning transmission electron microscopy images point to the high quality of the crystals with a well-defined layered tetragonal structure. The chemical compositions of the crystals were estimated by using the electron-probe x-ray microanalysis.

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preprint2008arXiv

Inelastic scattering in a monolayer graphene sheet; a weak-localization study

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of weak localization in a graphene sheet exfoliated from a piece of natural graphite and nano-patterned into a Hall-bar geometry. Much stronger chiral-symmetry-breaking elastic intervalley scattering in our graphene sheet restores the conventional weak localization. The resulting carrier-density and temperature dependence of the phase coherence length reveal that the electron-electron interaction including a direct Coulomb interaction is the main inelastic scattering factor while electron-hole puddles enhance the inelastic scattering near the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Josephson-vortex-flow terahertz emission in layered high-$T_c$ superconducting single crystals

We report on the successful terahertz emission (0.6$\sim$1 THz) that is continuous and tunable in its frequency and power, by driving Josephson vortices in resonance with the collective standing Josephson plasma modes excited in stacked Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ intrinsic Josephson junctions. Shapiro-step detection was employed to confirm the terahertz-wave emission. Our results provide a strong feasibility of developing long-sought solid-state terahertz-wave emission devices.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Spin relaxation in mesoscopic superconducting Al wires

We studied the diffusion and the relaxation of the polarized quasiparticle spins in superconductors. To that end, quasiparticles of polarized spins were injected through an interface of a mesoscopic superconducting Al wire in proximity contact with an overlaid ferromagnetic Co wire in the single-domain state. The superconductivity was observed to be suppressed near the spin-injecting interface, as evidenced by the occurrence of a finite voltage for a bias current below the onset of the superconducting transition. The spin diffusion length, estimated from finite voltages over a certain length of Al wire near the interface, was almost temperature independent in the temperature range sufficiently below the superconducting transition but grew as the transition temperature was approached. This temperature dependence suggests that the relaxation of the spin polarization in the superconducting state is governed by the condensation of quasiparticles to the paired state. The spin relaxation in the superconducting state turned out to be more effective than in the normal state.

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