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Researcher profile

Gil-Ho Lee

Gil-Ho Lee contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

9 published item(s)

preprint2021arXiv

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spin-orbit Torque Switching in an All-Van der Waals Heterostructure

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Steady Floquet-Andreev States Probed by Tunnelling Spectroscopy

Engineering quantum states through light-matter interaction has created a new paradigm in condensed matter physics. A representative example is the Floquet-Bloch state, which is generated by time-periodically driving the Bloch wavefunctions in crystals. Previous attempts to realise such states in condensed matter systems have been limited by the transient nature of the Floquet states produced by optical pulses, which masks the universal properties of non-equilibrium physics. Here, we report the generation of steady Floquet Andreev (F-A) states in graphene Josephson junctions by continuous microwave application and direct measurement of their spectra by superconducting tunnelling spectroscopy. We present quantitative analysis of the spectral characteristics of the F-A states while varying the phase difference of superconductors, temperature, microwave frequency and power. The oscillations of the F-A state spectrum with phase difference agreed with our theoretical calculations. Moreover, we confirmed the steady nature of the F-A states by establishing a sum rule of tunnelling conductance, and analysed the spectral density of Floquet states depending on Floquet interaction strength. This study provides a basis for understanding and engineering non-equilibrium quantum states in nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Lattice dynamics and spin-phonon interaction in strained NiO films

NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature.

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preprint2020arXiv

Strongly-bound excitons and trions in anisotropic 2D semiconductors

Monolayer and few-layer phosphorene are anisotropic quasi-two-dimensional (quasi-2D) van der Waals (vdW) semiconductors with a linear-dichroic light-matter interaction and a widely-tunable direct-band gap in the infrared frequency range. Despite recent theoretical predictions of strongly-bound excitons with unique properties, it remains experimentally challenging to probe the excitonic quasiparticles due to the severe oxidation during device fabrication. In this study, we report observation of strongly-bound excitons and trions with highly-anisotropic optical properties in intrinsic bilayer phosphorene, which are protected from oxidation by encapsulation with hexagonal boron nitride (hBN), in a field-effect transistor (FET) geometry. Reflection contrast and photoluminescence spectroscopy clearly reveal the linear-dichroic optical spectra from anisotropic excitons and trions in the hBN-encapsulated bilayer phosphorene. The optical resonances from the exciton Rydberg series indicate that the neutral exciton binding energy is over 100 meV even with the dielectric screening from hBN. The electrostatic injection of free holes enables an additional optical resonance from a positive trion (charged exciton) ~ 30 meV below the optical bandgap of the charge-neutral system. Our work shows exciting possibilities for monolayer and few-layer phosphorene as a platform to explore many-body physics and novel photonics and optoelectronics based on strongly-bound excitons with two-fold anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Evidence of Higher Order Topology in Multilayer WTe$_2$ from Josephson Coupling through Anisotropic Hinge States

The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get annihilated. However, the detection of these hinge states is difficult in the presence of the semimetallic behaviour of the bulk. Here, we spatially resolved the hinge states by analysing the magnetic field interference of supercurrent in Nb-WTe$_2$-Nb proximity Josephson junctions. The Josephson current along the a-axis of the WTe$_2$ crystal, but not along the b-axis, showed sharp enhancements at the edges of the junction; the amount of enhanced Josephson current was comparable to the upper limits of a single 1D conduction channel. Our experimental observations provide evidence of the higher order topological phase in WTe$_2$ and its corresponding anisotropic topological hinge states, in good agreement with theoretical calculations. Our work paves the way for hinge transport studies on topological semimetals in superconducting heterostructures, including their topological superconductivity.

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preprint2019arXiv

Imaging the Flow of Holes from a Collimating Contact in Graphene

A beam of holes formed in graphene by a collimating contact is imaged using a liquid-He cooled scanning probe microscope (SPM). The mean free path of holes is greater than the device dimensions. A zigzag shaped pattern on both sides of the collimating contact absorb holes that enter at large angles. The image charge beneath the SPM tip defects holes, and the pattern of flow is imaged by displaying the change in conductance between contacts on opposite sides, as the tip is raster scanned across the sample. Collimation is confirmed by bending hole trajectories away from the receiving contact with an applied magnetic field. The SPM images agree well with ray-tracing simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 °C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films

MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases with the strain, and splits below Néel temperature TN due to the magnetic-exchange interaction. Films grown on (110)-oriented MgO substrates exhibit a huge phonon splitting already at room temperature due to the anisotropic in-plane compressive strain. Below TN, additional phonon is activated in the IR spectra; this trend is evidence for a spin-order-induced structural phase transition from tetragonal to monoclinic phase. Total phonon splitting is 55 cm-1 in (110)-oriented MnO film, which is more than twice the value in bulk MnO. This result is evidence that the nearest neighbor exchange interaction, which is responsible for the magnetically driven phonon splitting, is greatly increased in compressively strained films.

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