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Hrvoje Petek

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Published work

16 published item(s)

preprint2022arXiv

Electron emission from plasmonically induced Floquet bands at metal surfaces

We explore the possibility of existence of plasmonically generated electronic Floquet bands at metal surfaces by studying the gauge transformed electron-surface plasmon interaction in the prepumped plasmonic coherent state environment. These bands may promote non-Einsteinian electron emission from metal surfaces exposed to primary interactions with strong electromagnetic fields. Resonant behaviour and scaling of emission yield with the parent electronic structure and plasmonic state parameters are estimated for Ag(111) surface. Relative yield intensities from non-Einsteinian emission channels in photoelectron spectra offer the means to calibrate the mediating plasmonic fields and therefrom ensuing surface Floquet bands.

preprint2022arXiv

Realization of one-dimensional electronic flat bands in an untwisted moire superlattice

Two-dimensional electronic flat bands and their induced correlated electronic interactions have been discovered, probed, and tuned in interlayer regions of hexagonally shaped van der Waals moire superlattices. Fabrication of anisotropic one-dimensional correlated bands by moire interference of 2D, however, remains a challenge. Here, we report an experimental discovery of 1D electronic flat bands near the Fermi level in an anisotropic rectangular moire superlattice composed of in situ grown, vdW stacked two-atomic-layer thick Bi(110) well-aligned on a SnSe(001) substrate. The epitaxial lattice mismatch between the aligned Bi and SnSe zigzag atomic chains causes strong three-dimensional anisotropic atomic relaxations with associated one-dimensional out-of- and in-plane strain distributions that are expressed in electronic bands of the Bi(110) layer, which are characterized jointly by scanning probe microscopy and density functional theory. At the regions of the strongest out-of-plane shear strain, a series of 1D flat bands near the Fermi level are experimentally observed and defined in our calculations. We establish that 1D flat bands can arise in moiré superlattices in absence of the relative layer twist, but solely through the lattice strain. We generalize the strategy of utilizing strain in lattice mismatched rectangular hetero-bilayers for engineering correlated anisotropic electronic bands.

preprint2021arXiv

Two-dimensional Dirac nodal-line semimetal protected by symmetry

Dirac nodal line semimetals (DNLSs) host relativistic quasiparticles in their one-dimensional (1D) Dirac nodal line (DNL) bands that are protected by certain crystalline symmetries. Their novel low-energy fermion quasiparticle excitations and transport properties invite studies of relativistic physics in the solid state where their linearly dispersing Dirac bands cross at continuous lines with four-fold degeneracy. In materials studied up to now, the four-fold degeneracy, however, has been vulnerable to suppression by the ubiquitous spin-orbit coupling (SOC). Despite the current effort to discover 3D DNLSs that are robust to SOC by theory, positive experimental evidence is yet to emerge. In 2D DNLSs, because of the decreased total density of states as compared with their 3D counterparts, it is anticipated that their physical properties would be dominated by the electronic states defined by the DNL. It has been even more challenging, however, to discover robust 2D DNLSs against SOC because of their lowered symmetry; no such materials have yet been predicted by theory. By combining molecular beam epitaxy growth, STM, nc-AFM characterisation, with DFT calculations and space group theory analysis, here we reveal a novel class of 2D crystalline DNLSs that host the exact symmetry that protects them against SOC. The discovered quantum material is a brick phase 3-AL Bi(110), whose symmetry protection and thermal stability are imparted by the compressive vdW epitaxial growth on black phosphorus substrates. The BP substrate templates the growth of 3-AL Bi(110) nano-islands in a non-symmorphic space group structure. This crystalline symmetry protects the DNL electronic phase against SOC independent of any orbital or elemental factors. We theoretically establish that this intrinsic symmetry imparts a general, robust protection of DNL in a series of isostructural 2D quantum materials.

preprint2020arXiv

Electron-phonon coupling in d-electron solids: A temperature dependent study of rutile TiO2 by first-principles theory and two-photon photoemission

Rutile TiO2 is a paradigmatic transition metal oxide with applications in optics, electronics, photocatalysis, etc., that are subject to pervasive electron-phonon interaction. To understand how energies of its electronic bands, and in general semiconductors or metals where the frontier orbitals have a strong d-band character, depend on temperature, we perform a comprehensive theoretical and experimental study of the effects of electron-phonon (e-p) interactions. In a two-photon photoemission (2PP) spectroscopy study we observe an unusual temperature dependence of electronic band energies within the conduction band of reduced rutile TiO2, which is contrary to the well understood sp-band semiconductors and points to a so far unexplained dichotomy in how the e-p interactions affect differently the materials where the frontier orbitals are derived from the sp- and d-orbitals. To develop a broadly applicable model, we employ state-of-the-art first-principles calculations that explain how phonons promote interactions between the Ti-3d orbitals of the conduction band within the octahedral crystal field. The characteristics differences in e-p interactions experienced by the Ti 3d-orbitals of rutile TiO2 crystal lattice are contrasted with the more familiar behavior of the Si 2s-orbitals of stishovite SiO2 polymorph, in which the frontier 2s-orbital experience a similar crystal field with the opposite effect...

preprint2020arXiv

Towards full surface Brillouin zone mapping by coherent multi-photon photoemission

We report a novel approach for coherent multi-photon photoemission band mapping of the entire Brillouin zone with infrared light that is readily implemented in a laboratory setting. We excite a solid state material, Ag(110), with intense femtosecond laser pulses to excite higher-order multi-photon photoemission; angle-resolved electron spectroscopic acquisition records photoemission at large in-plane momenta involving optical transitions from the occupied to unoccupied bands of the sample that otherwise might remain hidden by the photoemission horizon. We propose this as a complementary ultrafast method to time- and angle-resolved two-color, e.g. infrared pump and extreme ultraviolet probe, photoemission spectroscopy, with the advantage of being able to measure and control the coherent electron dynamics.

preprint2016arXiv

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.

preprint2015arXiv

Comparing quasiparticle H$_2$O level alignment on anatase and rutile TiO$_2$

Knowledge of the molecular frontier levels' alignment in the ground state can be used to predict the photocatalytic activity of an interface. The position of the adsorbate's highest occupied molecular orbital (HOMO) levels relative to the substrate's valence band maximum (VBM) in the interface describes the favorability of photogenerated hole transfer from the VBM to the adsorbed molecule. This is a key quantity for assessing and comparing H$_2$O photooxidation activities on two prototypical photocatalytic TiO$_2$ surfaces: anatase (A)-TiO$_2$(101) and rutile (R)-TiO$_2$(110). Using the projected density of states (DOS) from state-of-the-art quasiparticle (QP) $G_0W_0$ calculations, we assess the relative photocatalytic activity of intact and dissociated H$_2$O on coordinately unsaturated (Ti$_{\textit{cus}}$) sites of idealized stoichiometric A-TiO$_2$(101)/R-TiO$_2$(110) and bridging O vacancies (O$_{\textit{br}}^{\textit{vac}}$) of defective A-TiO$_{2-x}$(101)/R-TiO$_{2-x}$(110) surfaces ($x=\frac{1}{4},\frac{1}{8}$) for various coverages. Such a many-body treatment is necessary to correctly describe the anisotropic screening of electron-electron interactions at a photocatalytic interface, and hence obtain accurate interfacial level alignments. The more favorable ground state HOMO level alignment for A-TiO$_2$(101) may explain why the anatase polymorph shows higher photocatalytic activities than the rutile polymorph. Our results indicate that (1) hole trapping is more favored on A-TiO$_2$(101) than R-TiO$_2$(110) and (2) HO@Ti$_{\textit{cus}}$ is more photocatalytically active than intact H$_2$O@Ti$_{\textit{cus}}$.

preprint2015arXiv

Frequency comb generation at THz frequencies by coherent phonon excitation in Si

High-order nonlinear light-matter interactions in gases enable generation of x-ray and attosecond light pulses, metrology, and spectroscopy. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing. Third-order nonlinear optical processes in silicon have been used to process optical signals with greater than 1 GHz bandwidths. Fundamental physical processes for a Si-based optical modulator in the THz bandwidth range, however, have not yet been explored. Here we demonstrate ultrafast phononic modulation of the optical index of Si by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical (LO) phonon of Si (15.6 THz) generates a frequency comb up to 7th-order. All optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the Si crystalline lattice at its highest mechanical frequency.

preprint2015arXiv

Quasiparticle interfacial level alignment of highly hybridized frontier levels: H$_2$O on TiO$_2$(110)

Knowledge of the frontier levels' alignment prior to photo-irradiation is necessary to achieve a complete quantitative description of H$_2$O photocatalysis on TiO$_2$(110). Although H$_2$O on rutile TiO$_2$(110) has been thoroughly studied both experimentally and theoretically, a quantitative value for the energy of the highest H$_2$O occupied levels is still lacking. For experiment, this is due to the H$_2$O levels being obscured by hybridization with TiO$_2$(110) levels in the difference spectra obtained via ultraviolet photoemission spectroscopy (UPS). For theory, this is due to inherent difficulties in properly describing many-body effects at the H$_2$O-TiO$_2$(110) interface. Using the projected density of states (DOS) from state-of-the-art quasiparticle (QP) $G_0W_0$, we disentangle the adsorbate and surface contributions to the complex UPS spectra of H$_2$O on TiO$_2$(110). We perform this separation as a function of H$_2$O coverage and dissociation on stoichiometric and reduced surfaces. Due to hybridization with the TiO$_2$(110) surface, the H$_2$O 3a$_1$ and 1b$_1$ levels are broadened into several peaks between 5 and 1 eV below the TiO$_2$(110) valence band maximum (VBM). These peaks have both intermolecular and interfacial bonding and antibonding character. We find the highest occupied levels of H$_2$O adsorbed intact and dissociated on stoichiometric TiO$_2$(110) are 1.1 and 0.9 eV below the VBM. We also find a similar energy of 1.1 eV for the highest occupied levels of H$_2$O when adsorbed dissociatively on a bridging O vacancy of the reduced surface. In both cases, these energies are significantly higher (by 0.6 to 2.6 eV) than those estimated from UPS difference spectra, which are inconclusive in this energy region. Finally, we apply self-consistent QP$GW$ (scQP$GW$1) to obtain the ionization potential of the H$_2$O-TiO$_2$(110) interface.

preprint2014arXiv

Quasiparticle level alignment for photocatalytic interfaces

Electronic level alignment at the interface between an adsorbed molecular layer and a semiconducting substrate determines the activity and efficiency of many photocatalytic materials. Standard density functional theory (DFT) based methods have proven unable to provide a quantitative description of this level alignment. This requires a proper treatment of the anisotropic screening, necessitating the use of quasiparticle (QP) techniques. However, the computational complexity of QP algorithms has meant a quantitative description of interfacial levels has remained elusive. We provide a systematic study of a prototypical interface, bare and methanol covered rutile TiO$_2$(110) surfaces, to determine the type of many-body theory required to obtain an accurate description of the level alignment. This is accomplished via a direct comparison with metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS) and two-photon photoemission (2PP) spectra. We consider GGA DFT, hybrid DFT and $G_0W_0$, $\mathrm{scQP}GW1$, $\mathrm{scQP}GW_0$, and $\mathrm{scQP}GW$ QP calculations. Our results demonstrate that $G_0W_0$, or our recently introduced $\mathrm{scQP}GW1$ approach, are required to obtain the correct alignment of both highest occupied and lowest unoccupied interfacial molecular levels (HOMO/LUMO). These calculations set a new standard in the interpretation of electronic structure probe experiments of complex organic molecule-semiconductor interfaces.

preprint2014arXiv

Transient excitons at metal surfaces

Excitons, electron-hole pairs bound by the Coulomb potential, are fundamental quasiparticles of coherent light-matter interaction energizing processes from photosynthesis to optoelectronics. Excitons are observed in semiconductors, and their existence is implicit in the quantum theory of metals, yet their appearance is tenuous due to the screening of the Coulomb interaction on few femtosecond timescale. Here we present direct evidence for the dominant transient excitonic response at a Ag(111) surface, which precedes the full screening of the Coulomb interaction, in the course of a three-photon photoemission process with <15 femtosecond laser pulses. Electron-hole pair interaction through the excitonic response introduces coherent quasiparticle correlations beyond the single-particle description of the optics of metals, which dominate the multi-photon photoemission process.

preprint2013arXiv

Coherent phonon induced optical modulation in semiconductors at terahertz frequencies

The coherent modulation of electronic and vibrational nonlinearities in atoms and molecular gases by intense few-cycle pulses has been used for high-harmonic generation in the soft X-ray and attosecond regime, as well as for Raman frequency combs that span multiple octaves from the Terahertz to Petahertz frequency regions. In principle, similar high-order nonlinear processes can be excited efficiently in solids and liquids on account of their high nonlinear polarizability densities. In this paper, we demonstrate the phononic modulation of the optical index of Si and GaAs for excitation and probing near their direct band gaps, respectively at ~3.4 eV and ~3.0 eV. The large amplitude coherent longitudinal optical polarization due to the excitation of longitudinal optical (LO) phonon of Si (001) and LO phonon-plasmon coupled modes in GaAs (001) excited by 10-fs laser pulses induces effective amplitude and phase modulation of the reflected probe light. The combined action of the amplitude and phase modulation in Si and GaAs generates phonon frequency combs with more than 100 and 60 THz bandwidth, respectively.

preprint2013arXiv

Effect of n- and p-type Doping on Coherent Phonons in GaN

Effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and the A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and more so for donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. This enhanced coherent amplitude indicates that transient depletion field screening (TDFS), in addition to impulsive stimulated Raman scattering (ISRS), contribute to generation of the coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at the surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

preprint2013arXiv

Level alignment of a prototypical photocatalytic system: Methanol on TiO2(110)

Photocatalytic and photovoltaic activity depends on the optimal alignment of electronic levels at the molecule/semiconductor interface. Establishing level alignment experimentally is complicated by the uncertain chemical identity of the surface species. We address the assignment of the occupied and empty electronic levels for the prototypical photocatalytic system of methanol on a rutile TiO2 (110) surface. Using many-body quasiparticle (QP) techniques we show that the frontier levels measured in ultraviolet photoelectron and two photon photoemission spectroscopy experiments can be assigned with confidence to the molecularly chemisorbed methanol, rather than its decomposition product, the methoxy species. We find the highest occupied molecular orbital (HOMO) of the methoxy species is much closer to the valence band maximum, suggesting why it is more photocatalytically active than the methanol molecule. We develop a general semi-quantitative model for predicting many-body QP energies based on the appropriate description of electronic screening within the bulk, molecular or vacuum regions of the wavefunctions at molecule/semiconductor interfaces.

preprint2013arXiv

The birth of a quasiparticle in Si observed in time-frequency space

The concept of quasiparticles in solid-state physics is an extremely powerful way to describe complex many-body phenomena in terms of single particle excitations. Introducing a simple particle such as electron, e, hole, h, or a phonon, p, deforms a many-body system through interaction with other particles. We say the added particle is dressed or renormalized by a self-energy cloud that describes the response of the many-body system forming a new entity, the quasiparticle. With ultrafast laser techniques we can impulsively generate bare particles and observe their dressing by the many-body interactions, that is quasiparticle formation, on the time and energy scales governed by the Heisenberg uncertainty principle. Here we present the coherent response of Si to excitation with a 10 femtosecond (10-14 s) laser pulse. The optical pulse interacts with the sample via the complex second-order nonlinear susceptibility to generate a force on the lattice driving coherent phonon excitation. Transforming the transient reflectivity signal into frequency-time space by wavelet transform reveals interference effects leading to the coherent phonon generation and subsequent dressing of the phonon by electron-hole, e-h, pair excitations.

preprint2010arXiv

Self-Energy and Excitonic Effects in the Electronic and Optical Properties of TiO2 Crystalline Phases

We present a unified ab-initio study of electronic and optical properties of TiO2 rutile and anatase phases, with a combination of Density Functional Theory and Many Body Perturbation Theory techniques. The consistent treatment of exchange-correlation, with the inclusion of many body one-particle and two-particles effects in self-energy and electron-hole interaction, produces a high quality description of electronic and optical properties, giving, for some quantities, the first available estimation for this compound. In particular, we give a quantitative, direct evaluation of the electronic and direct optical gaps, clarifying their role with respect to previous values obtained by various experimental techniques. We obtain a description for both electronic gap and optical spectra that is consistent with experiments, analysing the role of different contributions to the experimental optical gap and relating them to the level of theory used in our calculations. We also show the spatial nature of excitons in the two crystalline phases, highlighting the localization character of different optical transitions. This paper aims at understanding and firmly establishing electro-optical bulk properties, so far not yet clarified, of this material of fundamental and technological interest for green energy applications.