BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Hosung Seo

Hosung Seo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.comp-phphysics.optics

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2022arXiv

Electrical Charge Control of h-BN Single Photon Sources

Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show the electrical switching of the photoluminescence from h-BN quantum emitters, enabled by the controllable electron transfer from the nearby charge reservoir. By tuning the Fermi level of graphene next to the h-BN defects, we observed luminescence brightening of a quantum emitter upon the application of a voltage due to the direct charge state manipulation. In addition, the correlation measurement of the single photon sources with the graphene's Raman spectroscopy allows us to extract the exact charge transition level of quantum emitters, providing the information on the crystallographic nature of the defect structure. With the complete on-off switching of emission intensity of h-BN quantum emitters using a voltage, our result paves the way for the van der Waals colour centre based photonic quantum information processing, cryptography and memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

First-principles theory of extending the spin qubit coherence time in hexagonal boron nitride

Negatively charged boron vacancies (VB-) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T2) is very short, limited to a few microseconds owing to the inherently dense nuclear spin bath of the h-BN host. As the coherence time is one of the most fundamental properties of spin qubits, the short T2 time of VB- could significantly limit its potential as a promising spin qubit candidate. In this study, we theoretically proposed two materials engineering methods, which can substantially extend the T2 time of the VB- spin by four times more than its intrinsic T2. We performed quantum many-body computations by combining density functional theory and cluster correlation expansion and showed that replacing all the boron atoms in h-BN with the 10B isotope leads to the coherence enhancement of the VB- spin by a factor of three. In addition, the T2 time of the VB- can be enhanced by a factor of 1.3 by inducing a curvature around VB-. Herein, we elucidate that the curvature-induced inhomogeneous strain creates spatially varying quadrupole nuclear interactions, which effectively suppress the nuclear spin flip-flop dynamics in the bath. Importantly, we find that the combination of isotopic enrichment and strain engineering can maximize the VB- T2, yielding 207.2 and 161.9 μs for single- and multi-layer h-10BN, respectively. Furthermore, our results can be applied to any spin qubit in h-BN, strengthening their potential as material platforms to realize high-precision quantum sensors, quantum spin registers, and atomically thin quantum magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Generalized scaling of spin qubit coherence in over 12,000 host materials

Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for host compounds with dilute nuclear spin baths, which enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence. We investigate more than 12,000 host compounds at natural isotopic abundance, and find that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap non-chalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer $T_2$ than SiC. We suggest new potential host compounds with promisingly long $T_2$ up to 47 ms, and pave the way to explore unprecedented functional materials for quantum applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Polarization and localization of single-photon emitters in hexagonal boron nitride wrinkles

Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defects symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing.

0 citations0 reviewsNo code linkedOpen access