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Researcher profile

Hongyu Yu

Hongyu Yu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciMachine LearningRoboticsArtificial IntelligenceComputer Visioncs.CYeess.IVphysics.app-phphysics.comp-ph

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Published work

7 published item(s)

preprint2026arXiv

When Agents See Humans as the Outgroup: Belief-Dependent Bias in LLM-Powered Agents

This paper reveals that LLM-powered agents exhibit not only demographic bias (e.g., gender, religion) but also intergroup bias under minimal "us" versus "them" cues. When such group boundaries align with the agent-human divide, a new bias risk emerges: agents may treat other AI agents as the ingroup and humans as the outgroup. To examine this risk, we conduct a controlled multi-agent social simulation and find that agents display consistent intergroup bias in an all-agent setting. More critically, this bias persists even in human-facing interactions when agents are uncertain about whether the counterpart is truly human, revealing a belief-dependent fragility in bias suppression toward humans. Motivated by this observation, we identify a new attack surface rooted in identity beliefs and formalize a Belief Poisoning Attack (BPA) that can manipulate agent identity beliefs and induce outgroup bias toward humans. Extensive experiments demonstrate both the prevalence of agent intergroup bias and the severity of BPA across settings, while also showing that our proposed defenses can mitigate the risk. These findings are expected to inform safer agent design and motivate more robust safeguards for human-facing agents.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A Thin Format Vision-Based Tactile Sensor with A Micro Lens Array (MLA)

Vision-based tactile sensors have been widely studied in the robotics field for high spatial resolution and compatibility with machine learning algorithms. However, the currently employed sensor's imaging system is bulky limiting its further application. Here we present a micro lens array (MLA) based vison system to achieve a low thickness format of the sensor package with high tactile sensing performance. Multiple micromachined micro lens units cover the whole elastic touching layer and provide a stitched clear tactile image, enabling high spatial resolution with a thin thickness of 5 mm. The thermal reflow and soft lithography method ensure the uniform spherical profile and smooth surface of micro lens. Both optical and mechanical characterization demonstrated the sensor's stable imaging and excellent tactile sensing, enabling precise 3D tactile information, such as displacement mapping and force distribution with an ultra compact-thin structure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

DelTact: A Vision-based Tactile Sensor Using Dense Color Pattern

Tactile sensing is an essential perception for robots to complete dexterous tasks. As a promising tactile sensing technique, vision-based tactile sensors have been developed to improve robot performance in manipulation and grasping. Here we propose a new design of a vision-based tactile sensor, DelTact. The sensor uses a modular hardware architecture for compactness whilst maintaining a contact measurement of full resolution (798*586) and large area (675mm2). Moreover, it adopts an improved dense random color pattern based on the previous version to achieve high accuracy of contact deformation tracking. In particular, we optimize the color pattern generation process and select the appropriate pattern for coordinating with a dense optical flow algorithm under a real-world experimental sensory setting. The optical flow obtained from the raw image is processed to determine shape and force distribution on the contact surface. We also demonstrate the method to extract contact shape and force distribution from the raw images. Experimental results demonstrate that the sensor is capable of providing tactile measurements with low error and high frequency (40Hz).

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Edge-based Tensor prediction via graph neural networks

Message-passing neural networks (MPNN) have shown extremely high efficiency and accuracy in predicting the physical properties of molecules and crystals, and are expected to become the next-generation material simulation tool after the density functional theory (DFT). However, there is currently a lack of a general MPNN framework for directly predicting the tensor properties of the crystals. In this work, a general framework for the prediction of tensor properties was proposed: the tensor property of a crystal can be decomposed into the average of the tensor contributions of all the atoms in the crystal, and the tensor contribution of each atom can be expanded as the sum of the tensor projections in the directions of the edges connecting the atoms. On this basis, the edge-based expansions of force vectors, Born effective charges (BECs), dielectric (DL) and piezoelectric (PZ) tensors were proposed. These expansions are rotationally equivariant, while the coefficients in these tensor expansions are rotationally invariant scalars which are similar to physical quantities such as formation energy and band gap. The advantage of this tensor prediction framework is that it does not require the network itself to be equivariant. Therefore, in this work, we directly designed the edge-based tensor prediction graph neural network (ETGNN) model on the basis of the invariant graph neural network to predict tensors. The validity and high precision of this tensor prediction framework were shown by the tests of ETGNN on the extended systems, random perturbed structures and JARVIS-DFT datasets. This tensor prediction framework is general for nearly all the GNNs and can achieve higher accuracy with more advanced GNNs in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light-induced Magnetic Phase Transition in van der Waals Antiferromagnets

Based on a simple tight-binding model, we propose a general theory of light-induced magnetic phase transition (MPT) in antiferromagnets based on the general conclusion that the bandgap of antiferromagnetic (AFM) phase is usually larger than that of ferromagnetic (FM) one in a given system. Light-induced electronic excitation prefers to stabilize the FM state over the AFM one, and once the critical photocarrier concentration (α_c) is reached, an MPT from AFM phase to FM phase takes place. This theory has been confirmed by performing first-principles calculations on a series of two-dimensional (2D) van der Waals (vdW) antiferromagnets and a linear relationship between α_c and the intrinsic material parameters is obtained. Importantly, our conclusion is still valid even considering the strong exciton effects during photoexcitation. Our general theory provides new ideas to realize reversible read-write operations for future memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Complex Spin Hamiltonian Represented by Artificial Neural Network

The effective spin Hamiltonian method is widely adopted to simulate and understand the behavior of magnetism. However, the magnetic interactions of some systems, such as itinerant magnets, are too complex to be described by any explicit function, which prevents an accurate description of magnetism in such systems. Here, we put forward a machine learning (ML) approach, applying an artificial neural network (ANN) and a local spin descriptor to develop effective spin potentials for any form of interaction. The constructed Hamiltonians include an explicit Heisenberg part and an implicit non-linear ANN part. Such a method successfully reproduces artificially constructed models and also sufficiently describe the itinerant magnetism of bulk Fe3GeTe2. Our work paves a new way for investigating complex magnetic phenomena (e.g., skyrmions) of magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs.

0 citations0 reviewsNo code linkedOpen access