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Hongtao Li

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Published work

8 published item(s)

preprint2026arXiv

Robust and Generalizable Atrial Fibrillation Detection from ECG Using Time-Frequency Fusion and Supervised Contrastive Learning

Atrial fibrillation (AF) is a common cardiac arrhythmia that significantly increases the risk of stroke and heart failure, necessitating reliable and generalizable detection methods from electrocardiogram (ECG) recordings. Although deep learning has advanced automated AF diagnosis, existing approaches often struggle to exploit complementary time-frequency information effectively, limiting both robustness under intra-dataset and generalization across diverse clinical datasets. To address these challenges, we propose a cross-modal deep learning framework comprising two key components: a Bidirectional Gating Module (BGM) and a Cross-modal Supervised Contrastive Learning (CSCL) strategy. The BGM facilitates dynamic, reciprocal refinement between time and frequency domain features, enhancing model robustness to signal variations within a dataset. Meanwhile, CSCL explicitly structures the joint embedding space by pulling together label-consistent samples and pushing apart different ones, thereby improving inter-class separability and enabling strong cross-dataset generalization. We evaluate our method through five-fold cross-validation on the AFDB and the CPSC2021 dataset, as well as bidirectional cross-dataset experiments (training on one and testing on the other). Results show consistent improvements over state-of-the-art methods across multiple metrics, demonstrating that our approach achieves both high intra-dataset robustness and excellent cross-dataset generalization. We further demonstrate that our method achieves high computational efficiency and anti-interference capability, making it suitable for edge deployment.

preprint2021arXiv

Low half-wave-voltage, ultra-high bandwidth thin-film LiNbO3 modulator based on hybrid waveguide and periodic capacitively loaded electrodes

A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 μm, resulting in a record low half-wave-voltage length product of only 1.7 V*cm. Capacitively loaded traveling-wave electrodes (CL-TWEs) are employed to reduce the microwave loss, while quartz substrate is used in place of silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave-voltage of 3.4 V and merely 1.3 dB roll-off in electro-optic response up to 67 GHz, and a 3-dB modulation bandwidth over 110 GHz is predicted.

preprint2016arXiv

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called "WM" well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.

preprint2016arXiv

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.

preprint2016arXiv

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

preprint2016arXiv

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

preprint2016arXiv

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

preprint2011arXiv

Similarities in electronic properties of organic charge-transfer solids and layered cobaltates

The apparently counterintuitive carrier concentration-dependent electronic properties of layered cobaltates have attracted wide interest. Here we point out that very similar carrier-concentration dependence has previously been noted in strongly correlated quasi-one dimensional (quasi-1D) organic charge-transfer solids. The normal states of both families can be understood, over the entire range of carrier concentration of interest, within the extended Hubbard Hamiltonian with significant intersite Coulomb interaction. As with the charge-transfer solids, superconductivity in the cobaltates appears to be limited to bandfilling of one-quarter. We point out further that there exist other families of correlated superconductors, such as spinels, where too strong correlations, geometric lattice frustration and bandfilling of one-quarter seem to be the essential features of the unconventional superconductors.