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Hongsheng Liu

Hongsheng Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scimath.OCmath.STStatistics Theory

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Published work

5 published item(s)

preprint2022arXiv

Eliminating edge electronic and phonon states of phosphorene nanoribbon by unique edge reconstruction

Edge termination plays a vital role in determining the properties of 2D materials. By performing compelling ab initio simulations, a lowest-energy U-edge [ZZ(U)] reconstruction is revealed in the bilayer phosphorene. Such reconstruction reduces 60% edge energy compared with the pristine one and occurs almost without energy barrier, implying it should be the dominating edge in reality. The electronic band structure of phosphorene nanoribbon with such reconstruction resembles that of intrinsic 2D layer, exhibiting nearly edgeless band characteristics. Although ZZ(U) changes the topology of phosphorene nanoribbon (PNR), simulated TEM, STEM and STM images indicates it is very hard to be identified. One possible identify method is IR/Raman analyses because ZZ(U) edge alters vibrational modes dramatically. Beyond, it also increases the thermal conductivity of PNR 1.4 and 2.3 times than the pristine and Klein edges.

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preprint2022arXiv

Statistical inference for piecewise normal distributions and stochastic variational inequalities

In this paper we first provide a method to compute confidence intervals for the center of a piecewise normal distribution given a sample from this distribution, under certain assumptions. We then extend this method to an asymptotic setting, and apply this method to compute confidence intervals for the true solution of a stochastic variational inequality based on a solution to a sample average approximation problem. The confidence intervals are computed with simple formulas. Performance of the proposed method is tested with numerical experiments.

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preprint2022arXiv

StepDIRECT -- A Derivative-Free Optimization Method for Stepwise Functions

In this paper, we propose the StepDIRECT algorithm for derivative-free optimization (DFO), in which the black-box objective function has a stepwise landscape. Our framework is based on the well-known DIRECT algorithm. By incorporating the local variability to explore the flatness, we provide a new criterion to select the potentially optimal hyper-rectangles. In addition, we introduce a stochastic local search algorithm performing on potentially optimal hyper-rectangles to improve the solution quality and convergence speed. Global convergence of the StepDIRECT algorithm is provided. Numerical experiments on optimization for random forest models and hyper-parameter tuning are presented to support the efficacy of our algorithm. The proposed StepDIRECT algorithm shows competitive performance results compared with other state-of-the-art baseline DFO methods including the original DIRECT algorithm.

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preprint2015arXiv

Point defects in epitaxial silicene on Ag(111) surface

Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of about 100 cm2V-1s-1, however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of v13*v13 silicene in experiments is revealed, and 4*4 silicene sheet is thought to be the most suitable structure for future device applications.

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preprint2014arXiv

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

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