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Hiroyuki Fujiwara

Hiroyuki Fujiwara contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Fully automated spectroscopic ellipsometry analyses of crystalline-phase semiconductors based on a new algorithm

One significant drawback of a spectroscopic ellipsometry (SE) technique is its time-consuming and often complicated analysis procedure necessary to assess the optical functions of thin-film and bulk samples. Here, to solve this inherent problem of a traditional SE method, we present a new general way that allows full automation of SE analyses for crystalline-phase semiconductors exhibiting complex absorption features. In particular, we have modified a scheme established in our previous study, which performs a non-linear SE fitting analysis only in a low energy region at the beginning, while the analyzed energy region is gradually expanded toward higher energy by incorporating addition optical transition peaks. In this study, we have further developed a unique analyzing-energy search algorithm, in which a proper analyzing-energy region is determined to incorporate the feature of a new transition peak. In the developed method, a drastic improvement over the previous simple approach has been confirmed for expressing complex dielectric functions consisting of sharp and broad absorption peaks. The proposed method (Delta M method) has been applied successfully to analyze perovskite-based crystalline samples, including hybrid perovskite (CH3NH3PbI3) and chalcogenide perovskites (SrHfS3 and BaZrS3). In the automated analyses of these semiconductors, 7-8 transition peaks are introduced automatically to describe sample dielectric functions, while structural parameters, such as thin-film and roughness thicknesses, are also determined simultaneously. The established method can drastically reduce an analysis time to a level that allows the automatic inspection of daily varying material optical properties and expands the application area of spectroscopic ellipsometry considerably.

preprint2019arXiv

Giant oscillator strength in the band-edge light absorption of zincblende, chalcopyrite and kesterite solar cell materials

In semiconducting solar-cell absorbers, high absorption coefficient (alpha) near the band-edge region is critical to maximize the photocurrent generation and collection. Nevertheless, despite the importance of the band-edge absorption characteristics, the quantitative analysis of the band-edge optical transitions has not been performed. In this study, we have implemented systematic density functional theory (DFT) calculation, focusing on the band-edge oscillator strength of seven practical solar cell absorbers (GaAs, InP, CdTe, CuInSe2, CuGaSe2, Cu2ZnSnSe4, and Cu2ZnSnS4) with zincblende, chalcopyrite and kesterite structures. We find that all these crystals exhibit the giant oscillator strength near the band gap region, revealing the fact that alpha in the band gap region is enhanced significantly by the anomalous high oscillator strength. In high-energy optical transitions, however, the oscillator strength reduces sharply and the absorption properties are determined primarily by the joint density-of-state contribution. Based on DFT results, we show that the giant oscillator strength in the band edge region originates from a unique tetrahedral-bonding structure, with a negligible effect of constituent atoms.

preprint2016arXiv

Degradation mechanism of CH3NH3PbI3 perovskite materials upon exposure to humid air

Low stability of organic-inorganic perovskite (CH3NH3PbI3) solar cells in humid air environments is a serious drawback which could limit practical application of this material severely. In this study, from real-time spectroscopic ellipsometry characterization, the degradation mechanism of ultra-smooth CH3NH3PbI3 layers prepared by a laser evaporation technique is studied. We present evidence that the CH3NH3PbI3 degradation in humid air proceeds by two competing reactions of (i) the PbI2 formation by the desorption of CH3NH3I species and (ii) the generation of a CH3NH3PbI3 hydrate phase by H2O incorporation. In particular, rapid phase change occurs in the near-surface region and the CH3NH3PbI3 layer thickness reduces rapidly in the initial 1-h air exposure even at a low relative humidity of 40%. After the prolonged air exposure, the CH3NH3PbI3 layer is converted completely to hexagonal platelet PbI2/hydrate crystals that have a distinct atomic-scale multilayer structure with a period of 0.65 nm. We find that conventional x-ray diffraction and optical characterization in the visible region, used commonly in earlier works, are quite insensitive to the surface phase change. Based on results obtained in this work, we discuss the degradation mechanism of CH3NH3PbI3 in humid air.

preprint2016arXiv

Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3

We report artifact-free CH3NH3PbI3 optical constants extracted from ultra-smooth perovskite layers without air exposure and assign all the optical transitions in the visible/ultraviolet region unambiguously based on density functional theory (DFT) analysis that assumes a simple pseudo-cubic crystal structure. From the self-consistent spectroscopic ellipsometry analysis of the ultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients of CH3NH3PbI3 (alpha = 3.8 x 10^4 cm-1 at 2.0 eV) are comparable to those of CuInGaSe2 and CdTe, and high alpha values reported in earlier studies are overestimated seriously by extensive surface roughness of CH3NH3PbI3 layers. The polarization-dependent DFT calculations show that CH3NH3+ interacts strongly with the PbI3- cage, modifying the CH3NH3PbI3 dielectric function in the visible region rather significantly. When the effect of CH3NH3+ on the optical transition is eliminated in the DFT calculation, CH3NH3PbI3 dielectric function deduced from DFT shows excellent agreement with the experimental result. As a result, distinct optical transitions observed at E0 (Eg) = 1.61 eV, E1 = 2.53 eV, and E2 = 3.24 eV in CH3NH3PbI3 are attributed to the direct semiconductor-type transitions at the R, M, and X points in the pseudo-cubic Brillouin zone, respectively. We further perform the quantum efficiency (QE) analysis for a standard hybrid-perovskite solar cell incorporating a mesoporous TiO2 layer and demonstrate that the QE spectrum can be reproduced almost perfectly when the revised CH3NH3PbI3 optical constants are employed. Depth-resolved QE simulations confirm that Jsc is limited by the material's longer wavelength response and indicate the importance of optical confinement and long carrier diffusion lengths in hybrid perovskite solar cells.

preprint2016arXiv

Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer is then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4], zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells.

preprint2014arXiv

Ontological Approach toward Cybersecurity in Cloud Computing

Widespread deployment of the Internet enabled building of an emerging IT delivery model, i.e., cloud computing. Albeit cloud computing-based services have rapidly developed, their security aspects are still at the initial stage of development. In order to preserve cybersecurity in cloud computing, cybersecurity information that will be exchanged within it needs to be identified and discussed. For this purpose, we propose an ontological approach to cybersecurity in cloud computing. We build an ontology for cybersecurity operational information based on actual cybersecurity operations mainly focused on non-cloud computing. In order to discuss necessary cybersecurity information in cloud computing, we apply the ontology to cloud computing. Through the discussion, we identify essential changes in cloud computing such as data-asset decoupling and clarify the cybersecurity information required by the changes such as data provenance and resource dependency information.

preprint2009arXiv

Difference between thermo- and pyroelectric Co- based RE-(= Nd, Y, Gd, Ce)-oxide composites measured by high-temperature gradient

Seebeck-Voltage measurements of Cobalt-based oxide-composites containing rare-earth elements (RE= Nd, Y, Gd, Ce) were performed under high temperature gradients up to 700 K. Several dependences were measured, Seebeeck voltage as a function of time U_S(t)or temperature difference U_S(Delta_T), closed circuited electric current as a function of Seebeck voltage I_S(U_S), or time I_S(t). While Nd2O3+CoO and Y2O3+CoO show linear n-type US(t)-behavior as usual thermoelectrics, Gd2O3+CoO possesses a large hysteresis. At both, Gd2O3- and Ce2O3+CoO also large time dependence I(t) referred to as pyroelectric material with high capacity were detected. Both anomalies became smaller when Fe2O3 is added or appear in Nd2O3+CoO and Y2O3+CoO when Al2O3 is added and can be explained by electron sucking into interfacial space charge regions, a new materials science challenge.