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Hiroshi Tanida

Hiroshi Tanida appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-sci

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Published work

16 published item(s)

preprint2022arXiv

Chirality-Controlled Enantiopure Crystal Growth of a Transition Metal Monosilicide by a Floating Zone Method

We performed a crystal growth to obtain chirality-controlled enantiopure crystals using a laser-diode-heated floating zone (LDFZ) method with a composition-gradient feed rod. It has been argued that the crystal handedness of $T$Si ($T$ : transition metal) is fixed depending on $T$ in the case of the ones grown by the conventional methods. We found that right-handed single crystals of CoSi and MnSi were grown from the composition gradient feed rods that consist of FeSi--CoSi and FeSi--MnSi, respectively. The obtained CoSi and MnSi crystals inherit the chirality from the seed part of FeSi, which grows in a right-handed structure, and thus have the chirality opposite to that for the crystals in the literature. The LDFZ method with the feed rods with various combinations of $T$Si compounds enables a flexible control of the chirality of $T$Si and will be useful for clarifying the interplay between the crystalline chirality and chirality-induced physical responses.

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preprint2022arXiv

Structural Phase Transition and Possible Valence Instability of Ce$-4f$ Electron Induced by Pressure in CeCoSi

X-ray powder diffraction and electrical resistivity measurements were performed on the tetragonal compound CeCoSi under pressure to elucidate the phase boundary of the pressure-induced structural transition and the change in the 4$f$ electronic state. The temperature-pressure phase diagram has been determined from the shift of the Bragg peaks and from the anomaly in the resistivity. The critical pressure, $P_{\rm s}$ $\sim$ 4.9 GPa at 300 K, decreases to $P_{\rm s}$ $\sim$ 3.6 GPa at 10 K. The decrease of $P_{\rm s}$ is due not only to the decrease in volume of the unit cell but also to an anisotropic shrinkage by cooling. When crossing the boundary to the high-pressure phase, the resistivity shows a significant drop to exhibit a metallic temperature dependence. The results of this study strongly suggest that the structural phase transition can be ascribed to valence instability of Ce-$4f$ electron.

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preprint2022arXiv

Structural Transition in the Hidden Ordered Phase of CeCoSi

We have performed X-ray diffraction experiments on a single crystalline CeCoSi to investigate the unresolved ordered phase below $T_0 \sim 12$ K. We have discovered that a triclinic lattice distortion takes place below $T_0$, which is further modified in the subsequent antiferromagnetic ordered phase. The structural domains can be selected by applying a magnetic field, indicating that some electronic ordering exists behind and affects the magnetic anisotropy in the hidden ordered phase below $T_0$. The transition at $T_0$, although the order parameter is still unknown, is associated with the maximum in the $c$-axis lattice parameter. In magnetic fields along $[1, 0, 0]$, the structural transition temperature, named as $T_{\text{s1}}$, deviates from $T_0$ and decreases with increasing the field, whereas $T_0$ increases. This shows that the hidden ordered phase without triclinic distortion exists between $T_{\text{s1}}$ and $T_0$. The results for $H \parallel [1, 1, 0]$ are also reported.

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preprint2021arXiv

Unusual Nonmagnetic Ordered State in CeCoSi Revealed by $^{59}$Co-NMR and NQR Measurements

We performed $^{59}$Co nuclear magnetic and quadrupole resonance (NMR and NQR) measurements under pressure on a single-crystalline CeCoSi, which undergoes an unresolved phase transition at $T_0$. The NQR spectra clearly showed that the phase transition at $T_0$ is nonmagnetic, but any symmetry lowering at the Co site was not seen irrespective of the feature of second-order phase transition. By contrast, the NMR spectra were split by the induced magnetic field perpendicular to the external magnetic field. These results show that the phase below $T_0$ is not a simple paramagnetic state but is most likely electric multipolar ordered state of Ce $4f$ electrons. The development of the Kondo effect by applying pressure is thought to be crucial to stabilize this state and to show novel features beyond commonality of tetragonal Ce-based systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Relation between $c$-$f$ hybridization and magnetic ordering in CeRu$_2$Al$_{10}$: An optical conductivity study of Ce(Ru$_{1-x}$Rh$_x$)$_2$Al$_{10}$ ($x\leq0.05$)

A Kondo semiconductor CeRu$_2$Al$_{10}$ with an orthorhombic crystal structure shows an unusual antiferromagnetic ordering at rather high temperature $T_0$ of 27.3 K, which is lower than the Kondo temperature $T_{\rm K}\sim$ 60 K. In optical conductivity [$σ(ω)$] spectra that directly reflect electronic structure, the $c$-$f$ hybridization gap between the conduction and $4f$ states is observed at around 40 meV along the three principal axes. However, an additional peak at around 20 meV appears only along the $b$ axis. With increasing $x$ to 0.05 in Ce(Ru$_{1-x}$Rh$_x$)$_2$Al$_{10}$, the $T_0$ decreases slightly from 27.3 K to 24 K, but the direction of the magnetic moment changes from the $c$ axis to the $a$ axis. Thereby, the $c$-$f$ hybridization gap in the $σ(ω)$ spectra is strongly suppressed, but the intensity of the 20-meV peak remains as strong as for $x=0$. These results suggest that the change of the magnetic moment direction originates from the decreasing of the $c$-$f$ hybridization intensity. The magnetic ordering temperature $T_0$ is not directly related to the $c$-$f$ hybridization but is related to the charge excitation at 20 meV observed along the $b$ axis.

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preprint2014arXiv

Dispersive magnetic resonance mode in the Kondo semiconductor CeFe2Al10

The CeT2Al10 family of orthorhombic compounds exhibits a very peculiar evolution from a Kondo-insulator (T: Fe) to an unconventional long-range magnetic order (T: Ru, Os). Inelastic neutron scattering experiments performed on single-crystal CeFe2Al10 reveal that this material develops a spin-gap in its magnetic spectral response below ~ 50 K, with a magnetic excitation dispersing from $E = 10.2 \pm 0.5$ meV at the Y zone-boundary point [q = (0,1,0)] to $\approx 12$ meV at the top of the branch. The excitation shows a pronounced polarization of the magnetic fluctuations along a, the easy anisotropy axis. Its behavior is contrasted with that of the (magnonlike) modes previously reported for CeRu2Al10, which have transverse character and exist only in the antiferromagnetic state. The present observation is ascribed to a "magnetic exciton" mechanism invoked to explain a similar magnetic response previously discovered in YbB12.

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preprint2013arXiv

Magnetic instability induced by Rh-doping in Kondo semiconductor CeRu$_2$Al$_{10}$

Magnetic ground state of Rh-doped Kondo semiconductor CeRu$_2$Al$_{10}$ [Ce(Ru$_{1-x}$Rh$_x$)$_2$Al$_{10}$] is investigated by muon-spin relaxation method. Muon-spin precession with two frequencies is observed in the $x$ = 0 sample, while only one frequency is present in the $x$ = 0.05 and 0.1 samples, which is attributed to the broad static field distribution at the muon site. The internal field at the muon site is enhanced from about 180 G in $x$ = 0 sample to about 800 G in the Rh-doped samples, supporting the spin-flop transition as suggested by macroscopic measurements, and the boundary of different magnetic ground states is identified around $x$ = 0.03. The drastic change of magnetic ground state by a small amount of Rh-doping (3%) indicates that the magnetic structure in CeRu$_2$Al$_{10}$ is not robust and can be easily tuned by external perturbations such as electron doping. The anomalous temperature dependence of internal field in CeRu$_2$Al$_{10}$ is suggested to be attributed to the hyperfine interaction between muons and conduction electrons.

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preprint2012arXiv

Anisotropic spin-dynamics in the Kondo semiconductor CeRu2Al10

Spin dynamics in the new Kondo insulator compound CeRu2Al10 has been studied using unpolarized and polarized neutron scattering on single crystals. In the unconventional ordered phase forming below T0 = 27.3 K, two excitation branches are observed with significant intensities, the lower one of which has a gap of 4.8 +/- 0.3 meV and a pronounced dispersion up to about 8.5 meV. Comparison with RPA magnon calculations assuming crystal-field and anisotropic exchange couplings captures major aspects of the data, but leaves unexplained discrepancies, pointing to a key role of direction-specific hybridization between 4f and conduction band states in this compound.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High-field magnetization and magnetic phase transition in CeOs2Al10

We have studied the magnetization of CeOs2Al10 in high magnetic fields up to 55 T for H // a and constructed the magnetic phase diagram for H // a. The magnetization curve shows a concave H dependence below T_max \sim40 K which is higher than the transition temperature T_0 \sim29 K. The magnetic susceptibility along the a-axis shows a smooth and continuous decrease down to \sim20 K below T_max \sim40 K without showing an anomaly at T_0. From these two results, a Kondo singlet is formed below T_max and coexists with the antiferro magnetic order below T_0. We also propose that the larger suppression of the spin degrees of freedom along the a-axis than along the c-axis below T_max is associated with the origin of the antiferro magnetic component.

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preprint2010arXiv

Anisotropic Transport Properties of CeRu$_2$Al$_{10}$

We studied the transport properties of CeRu_2Al_10 single crystals. All the transport properties show largely anisotropic behaviors below T_0. Those along the a- and c-axes show similar behaviors, but are different from those along the b-axis. This suggests that the system could be viewed as a two-dimensional system. The results of the thermal conductivity and thermoelectric power could be explained by assuming the singlet ground state below T_0. However, the ground state is not simple but has some kind of structure within a spin gap.

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preprint2010arXiv

Existence of Fine Structure inside Spin Gap in CeRu2Al10

We investigate the magnetic field effect on the spin gap state in CeRu2Al10 by measuring the magnetization and electrical resistivity. We found that the magnetization curve for the magnetic field H//c shows a metamagnetic-like anomaly at H*~4 T below T_0=27 K, but no anomaly for H//a and H//b. A shoulder of the electrical resistivity at Ts~5 K for I//c is suppressed by applying a longitudinal magnetic field above 5 T. Many anomalies are also found in the magnetoresistance for Hkc below ~5 K. The obtained magnetic phase diagram consists of at least two or three phases below T_0. These results strongly indicate the existence of a fine structure at a low energy side in a spin gap state with the excitation energy of 8 meV recently observed in the inelastic neutron scattering experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High-Field Magnetization of CeRu2Al10

The magnetization measurements of CexLa1-xRu2Al10 (x = 1, 0.75) under the high magnetic field were performed in order to obtain the information for the long-range order (LRO) in CeRu2Al10. We successfully obtained the magnetic phase diagram of these two compounds for the applied magnetic field along the a-axis which is the magnetization easy axis, and found that the LRO for x = 1 disappears at ~50 T which is the critical field to the paramagnetic phase. For x = 0.75, the critical magnetic field decreases to ~37 T by La substitution. The magnetic phase diagram and magnetization curve are qualitatively consistent with the recent Hanzawa's mean field calculation results obtained by assuming the dimer of Ce ions whose crystalline electric field ground state has a large magnetic anisotropy. These results support the singlet pair formation scenario recently proposed by Tanida et al.. We also pointed out the possibility of the appearance of the field-induced magnetic phase between ~40 T and ~50 T for x = 1.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Long-range order and low-energy magnetic excitations in CeRu2Al10

The nature of the unconventional ordered phase occurring in CeRu2Al10 below T0 = 27 K was investigated by neutron scattering. Powder diffraction patterns show clear superstructure peaks corresponding to forbidden (h + k)-odd reflections of the Cmcm space group. Inelastic neutron scattering experiments further reveal a pronounced magnetic excitation developing in the ordered phase at an energy of 8 meV.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis

We have studied the magnetization and magnetoresistance of CeRu2Al10 in the applied magnetic field H along the c-axis up to ~ 55 T. The magnetization M at low temperatures shows an H-linear increase with a small slope of M/H than that for H // a-axis up to ~ 55 T after showing a small anomaly at H ~ 4 T, which indicates that the critical field to the paramagnetic phase H_c^p is higher than 55 T for H // c-axis. The magnetization curves for H // a- and c-axes below the antiferro magnetic (AFM) transition temperature T0 behave as if the magnetic anisotropy in the AFM-ordered phase is small, although there exists a large magnetic anisotropy in the paramagnetic phase, which favors the easy magnetization axis along the a-axis. On the other hand, very recently, Khalyavin et al. have reported that the AFM order where the magnetic moment is parallel to the c-axis takes place below T0. These results indicate that the AFM order in this compound is not a simple one. The longitudinal magnetoresistance for H // c-axis at low temperatures shows no anomaly originating from the phase transition, but shows oscillations below 4.2 K. This oscillatory behavior below 4.2 K originates from the Shubnikov-de Haas oscillations, from which the cross section of the Fermi surface normal to the c-axis is estimated to be 1.0*10^14 cm-2, with no large effective mass. This is the first direct evidence of the existence of the Fermi surface below T0.

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preprint2010arXiv

Neutron scattering study of the long-range ordered state in CeRu2Al10

Elastic and inelastic neutron scattering measurements have been performed on powder and single-crystal samples of orthorhombic CeRu2Al10. The order forming below T0 = 27 K was identified as a long-range antiferromagnetic state with the wave vector k = (1,0,0). The magnetic spectral response in the ordered phase, measured on powder, is characterized by a spin gap and a pronounced peak at 8 meV, whose Q dependence suggests a magnetic origin. Both features are suppressed when temperature is raised to T0, and a conventional relaxational behavior is observed at 40 K. This peculiar spin dynamics is discussed in connection with recent magnetization results for the same compound.

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preprint2010arXiv

Possible Long-Range Order with Singlet Ground State in CeRu2Al10

We investigate the thermal and transport properties of CexLa1-xRu2Al10 to clarify the origin of the recently discovered mysterious phase below T0=27 K in CeRu2Al10 where a large magnetic entropy is released, however, the existence of an internal magnetic field is ruled out by 27Al-NQR measurement. We find that T0 decreases with decreasing x and disappears at x~0.45. T0 of CeRu2Al10 is suppressed down to 26 K under H=14.5 T along the a-axis. These results clearly indicate that the transition has a magnetic origin and is ascribed to the interaction between Ce ions. Considering the results of specific heat, magnetic susceptibility, thermal expansion, and electrical resistivity and also 27Al NQR, we propose that the transition originates from the singlet pair formation between Ce ions. Although its properties in a Ce dilute region is basically understood by the impurity Kondo effect, CeRu2Al10 shows a Kondo-semiconductor-like behavior. The phase transition at T0 may be characterized as a new type of phase transition that appears during the crossover from the dilute Kondo to the Kondo semiconductor.

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