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Hiroshi Ikuta

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el

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preprint2024arXiv

Single Crystal Growth and Transport Properties of van der Waals Materials $AB$Te$_\mathbf{4}$ ($A/B$ = Ti, Zr, Hf)

Monolayers of $AB$Te$_4$ ($A$/$B$ = Ti, Zr, Hf) were theoretically predicted to be two-dimensional topological insulators, but little has been known about the physical properties of these compounds. Here, we report on the single crystal growth, bulk transport properties, and band structure calculations of these compounds. The magnetotransport properties indicate that all three compounds are multi-carrier systems. The experimental results of ZrTiTe$_4$ and HfTiTe$_4$ can be well fitted by the multi-carrier formula assuming two types of carriers, while three carrier components were necessary for HfZrTe$_4$. Interestingly, one of the carrier mobilities of HfZrTe$_4$ exceeded 1000 cm$^2$V$^{-1}$s$^{-1}$, which was nearly one order in magnitude larger than the carrier mobilities of ZrTiTe$_4$ and HfTiTe$_4$. Our band structure calculations showed that all three compounds are semimetals consistent with the magnetotransport properties. The band structure around the $Γ$-point of HfZrTe$_4$ exhibits features that are distinct from the other two compounds, which is likely the reason of the different carrier properties.

preprint2020arXiv

Anisotropy of the transport properties of NdFeAs(O,F) thin films grown on vicinal substrates

NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.

preprint2014arXiv

Highly textured oxypnictide superconducting thin films on metal substrates

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 x 104 A/cm2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.

preprint2012arXiv

Spin-Density-Wave Gap with Dirac Nodes and Two-Magnon Raman Scattering in BaFe2As2

Raman selection rules for electronic and magnetic excitations in BaFe2As2 were theoretically investigated and applied them to the separate detection of the nodal and anti-nodal gap excitations at the spin density wave (SDW) transition and the separate detection of the nearest and the next nearest neighbor exchange interaction energies. The SDW gap has Dirac nodes, because many orbitals participate in the electronic states near the Fermi energy. Using a two-orbital band model the electronic excitations near the Dirac node and the anti-node are found to have different symmetries. Applying the symmetry difference to Raman scattering the nodal and anti-nodal electronic excitations are separately obtained. The low-energy spectra from the anti-nodal region have critical fluctuation just above TSDW and change into the gap structure by the first order transition at TSDW, while those from the nodal region gradually change into the SDW state. The selection rule for two-magnon scattering from the stripe spin structure was obtained. Applying it to the two-magnon Raman spectra it is found that the magnetic exchange interaction energies are not presented by the short-range superexchange model, but the second derivative of the total energy of the stripe spin structure with respect to the moment directions. The selection rule and the peak energy are expressed by the two-magnon scattering process in an insulator, but the large spectral weight above twice the maximum spin wave energy is difficult to explain by the decayed spin wave. It may be explained by the electronic scattering of itinerant carriers with the magnetic self-energy in the localized spin picture or the particle-hole excitation model in the itinerant spin picture. The magnetic scattering spectra are compared to the insulating and metallic cuprate superconductors whose spins are believed to be localized.

preprint2012arXiv

STM imaging of symmetry-breaking structural distortion in the Bi-based cuprate superconductors

A complicating factor in unraveling the theory of high-temperature (high-Tc) superconductivity is the presence of a "pseudogap" in the density of states, whose origin has been debated since its discovery [1]. Some believe the pseudogap is a broken symmetry state distinct from superconductivity [2-4], while others believe it arises from short-range correlations without symmetry breaking [5,6]. A number of broken symmetries have been imaged and identified with the pseudogap state [7,8], but it remains crucial to disentangle any electronic symmetry breaking from pre-existing structural symmetry of the crystal. We use scanning tunneling microscopy (STM) to observe an orthorhombic structural distortion across the cuprate superconducting Bi2Sr2Can-1CunO2n+4+x (BSCCO) family tree, which breaks two-dimensional inversion symmetry in the surface BiO layer. Although this inversion symmetry breaking structure can impact electronic measurements, we show from its insensitivity to temperature, magnetic field, and doping, that it cannot be the long-sought pseudogap state. To detect this picometer-scale variation in lattice structure, we have implemented a new algorithm which will serve as a powerful tool in the search for broken symmetry electronic states in cuprates, as well as in other materials.

preprint2010arXiv

Systematic Comparison of Eight Substrates in the Growth of FeSe$_{0.5}$Te$_{0.5}$ Superconducting Thin Films

We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_\mathrm{c}^\mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.