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Hirokazu Ikeda

Hirokazu Ikeda appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-det astro-ph.IM hep-ex astro-ph.CO

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preprint2020arXiv

Development of a Low-noise Front-end ASIC for CdTe Detectors

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout channels, and has a function that performs simultaneous AD conversion for each channel. The equivalent noise charge of 54.9 e- +/- 11.3 e- (rms) is measured without connecting the ASIC to any detectors. From the spectroscopy measurements using a CdTe single-sided strip detector, the energy resolution of 1.12 keV (FWHM) is obtained at 13.9 keV, and photons within the energy from 6.4 keV to 122.1 keV are detected. Based on the experimental results, we propose a new low-noise readout architecture making use of a slew-rate limited mode at the shaper followed by a peak detector circuit.

preprint2015arXiv

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.

preprint2014arXiv

High-z gamma-ray bursts for unraveling the dark ages mission HiZ-GUNDAM

We are now investigating and studying a small satellite mission HiZ-GUNDAM for future observation of gamma-ray bursts (GRBs). The mission concept is to probe "the end of dark ages and the dawn of formation of astronomical objects", i.e. the physical condition of early universe beyond the redshift z > 7. We will consider two kinds of mission payloads, (1) wide field X-ray imaging detectors for GRB discovery, and (2) a near infrared telescope with 30 cm in diameter to select the high-z GRB candidates effectively. In this paper, we explain some requirements to promote the GRB cosmology based on the past observations, and also introduce the mission concept of HiZ-GUNDAM and basic development of X-ray imaging detectors.

preprint2013arXiv

Single event effect characterization of the mixed-signal ASIC developed for CCD camera in space use

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion beams at HIMAC/NIRS in Japan. The particles with high linear energy transfer (LET) of 57.9 MeV cm^{2}/mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of sigma_{SEL} < 4.2x10^{-11} cm^{2}/(IonxASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide range of energy. Taking into account that a part of the protons creates recoiled heavy ions that has higher LET than that of the incident protons, we derived the probability of SEU event as a function of LET. Then the SEE event rate in a low-earth orbit is estimated considering a simulation result of LET spectrum. SEL rate is below once per 49 years, which satisfies the required latch-up tolerance. The upper limit of the SEU rate is derived to be 1.3x10^{-3}events/sec. Although the SEU events cannot be distinguished from the signals of X-ray photons from astronomical objects, the derived SEU rate is below 1.3% of expected non-X-ray background rate of the detector and hence these events should not be a major component of the instrumental background.

preprint2012arXiv

Developement of readout ASIC for FPCCD vertex detector

One of candidates for the International Linear Collider(ILC)'s vertex detector is the Fine Pixel CCD (FPCCD) with a pixel size of 5 \times 5 (\mum^2). Sensor and readout systems are currently being studied and prototypes have been developed. In this paper we will report on the performance of latest developed readout ASIC prototype as well as the outline of the design strategy for the next ASIC prototype.

preprint2012arXiv

R&D Status of FPCCD Vertex Detector for ILD

Fine pixel CCD (FPCCD) is one of the candidate sensor technologies for the vertex detector used for experiments at the International Linear Collider (ILC). A vertex detector system for the International Large Detector (ILD) using FPCCD sensors has been designed. We report on the R&D status of FPCCD sensors, as well as the vertex detector design for ILD.

preprint2010arXiv

Irradiation test on FD-SOI Readout ASIC of Pair-monitor

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes the directional distribution of a large number of electron-positron pairs created by collision of bunches, and is required to tolerate radiation dose of about a few Mrad/year. The irradiation might cause the buried oxide layer of SOI to accumulate charges which interfere with intended functions. We thus performed extensive irradiation tests on the prototype ASIC, and the results are described in this paper.